Abstract
Substrate temperature effects on the structural and electrical properties of annealed C54 TiSi2 thin films grown on p-Si (100) substrates using a sputtering method were determined with the objective of improving the properties of the films. The results of scanning electron microscopy, energy-dispersive X-ray fluorescence, and X-ray diffraction measurements showed that the thickness of the C54 TiSi2 thin films increases with increasing substrate temperature and that the sheet resistance decreases with increasing substrate temperature up to 200°C. These results indicate that the structural and electrical properties of annealed C54 TiSi2 thin films grown on p-Si (100) substrates using a sputtering method can be improved by increasing substrate temperature, and that these films grown on p-Si(100) substrates using a high-temperature sputtering method hold promise for potential applications in Si-based ultralarge-scale integration devices.
Original language | English |
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Pages (from-to) | 6323-6326 |
Number of pages | 4 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 42 |
Issue number | 10 |
DOIs | |
State | Published - Oct 2003 |
Keywords
- C54 TiSi
- Electrical properties
- Sheet resistance
- Structural properties
- Substrate temperature