Design and fabrication of a low-noise amplifier for the V-band

Tae Sin Kang; Seong Dae Lee; Bok Hyoung Lee; Sam Dong Kim; Hyun Chang Park; Hyung Moo Park; Jin Koo Rhee

Design and fabrication of a low-noise amplifier for the V-band

Tae Sin Kang
, Seong Dae Lee
, Bok Hyoung Lee
, Sam Dong Kim
, Hyun Chang Park
, Hyung Moo Park
, Jin Koo Rhee

Department of Electronics & Electrical Engineering

Dongguk University

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Millimeter-wave monolithic integrated circuit (MIMIC)-based V-band low-noise amplifiers (LNA) were fabricated using high-performance 0.1-μ Γ-shaped pseudomorphic high electron mobility transistors (PHEMT's), coplanar waveguide structures, and an integrated process for passive and active devices. The LNA was designed in a chip size of 2.3×1.4 mm² by using 2-stage PHEMT's with two 70-μm fingers. A high S₂₁ gain of 14.9 dB and good matching at 60 GHz were achieved from the circuits, and a 20-dBm IP3 and 6.7-dB N F_min were obtained from the LNA's.

Original language	English
Pages (from-to)	533-538
Number of pages	6
Journal	Journal of the Korean Physical Society
Volume	41
Issue number	4
State	Published - Oct 2002

Keywords

CPW
GaAs
High gain
LNA
Low noise
MIMIC
V-band

Cite this

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title = "Design and fabrication of a low-noise amplifier for the V-band",

abstract = "Millimeter-wave monolithic integrated circuit (MIMIC)-based V-band low-noise amplifiers (LNA) were fabricated using high-performance 0.1-μ Γ-shaped pseudomorphic high electron mobility transistors (PHEMT's), coplanar waveguide structures, and an integrated process for passive and active devices. The LNA was designed in a chip size of 2.3×1.4 mm2 by using 2-stage PHEMT's with two 70-μm fingers. A high S21 gain of 14.9 dB and good matching at 60 GHz were achieved from the circuits, and a 20-dBm IP3 and 6.7-dB N Fmin were obtained from the LNA's.",

keywords = "CPW, GaAs, High gain, LNA, Low noise, MIMIC, V-band",

author = "Kang, \{Tae Sin\} and Lee, \{Seong Dae\} and Lee, \{Bok Hyoung\} and Kim, \{Sam Dong\} and Park, \{Hyun Chang\} and Park, \{Hyung Moo\} and Rhee, \{Jin Koo\}",

year = "2002",

month = oct,

language = "English",

volume = "41",

pages = "533--538",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

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TY - JOUR

T1 - Design and fabrication of a low-noise amplifier for the V-band

AU - Kang, Tae Sin

AU - Lee, Seong Dae

AU - Lee, Bok Hyoung

AU - Kim, Sam Dong

AU - Park, Hyun Chang

AU - Park, Hyung Moo

AU - Rhee, Jin Koo

PY - 2002/10

Y1 - 2002/10

N2 - Millimeter-wave monolithic integrated circuit (MIMIC)-based V-band low-noise amplifiers (LNA) were fabricated using high-performance 0.1-μ Γ-shaped pseudomorphic high electron mobility transistors (PHEMT's), coplanar waveguide structures, and an integrated process for passive and active devices. The LNA was designed in a chip size of 2.3×1.4 mm2 by using 2-stage PHEMT's with two 70-μm fingers. A high S21 gain of 14.9 dB and good matching at 60 GHz were achieved from the circuits, and a 20-dBm IP3 and 6.7-dB N Fmin were obtained from the LNA's.

AB - Millimeter-wave monolithic integrated circuit (MIMIC)-based V-band low-noise amplifiers (LNA) were fabricated using high-performance 0.1-μ Γ-shaped pseudomorphic high electron mobility transistors (PHEMT's), coplanar waveguide structures, and an integrated process for passive and active devices. The LNA was designed in a chip size of 2.3×1.4 mm2 by using 2-stage PHEMT's with two 70-μm fingers. A high S21 gain of 14.9 dB and good matching at 60 GHz were achieved from the circuits, and a 20-dBm IP3 and 6.7-dB N Fmin were obtained from the LNA's.

KW - CPW

KW - GaAs

KW - High gain

KW - LNA

KW - Low noise

KW - MIMIC

KW - V-band

UR - https://www.scopus.com/pages/publications/0035981414

M3 - Article

AN - SCOPUS:0035981414

SN - 0374-4884

VL - 41

SP - 533

EP - 538

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 4

ER -

Design and fabrication of a low-noise amplifier for the V-band

Abstract

Keywords

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