Design, fabrication and analysis of S-band MMIC power amplifier

Kwang Kyung Lee, Dan An, Jin Koo Rhee, Hyun Chang Park, Yong Soon Yoon

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

In this paper GaAs power MESFETs and a passive device library were developed, and used in the realization of an S-band MMIC power amplifier. The bonding line component was considered in the design of the amplifier. S21 and S11, were 30 dB and-13.8 dB, respectively, according to simulation. The amplifier was fabricated by a seven-mask process, and bonded to a test fixture. At the center frequency of 2.45 GHz, S21, and S11, were measured to be 29.6 dB and-15.0 dB, respectively. The chip size was 1.8 mm×0.9 mm.

Original languageEnglish
Title of host publicationIEEE Region 10 Annual International Conference, Proceedings/TENCON
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages994-997
Number of pages4
ISBN (Electronic)0780357396, 9780780357396
DOIs
StatePublished - 1999
Event1999 IEEE Region 10 Conference, TENCON 1999 - Cheju Island, Korea, Republic of
Duration: 15 Sep 199917 Sep 1999

Publication series

NameIEEE Region 10 Annual International Conference, Proceedings/TENCON
Volume2
ISSN (Print)2159-3442
ISSN (Electronic)2159-3450

Conference

Conference1999 IEEE Region 10 Conference, TENCON 1999
Country/TerritoryKorea, Republic of
CityCheju Island
Period15/09/9917/09/99

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