TY - GEN
T1 - Design, fabrication and analysis of S-band MMIC power amplifier
AU - Lee, Kwang Kyung
AU - An, Dan
AU - Rhee, Jin Koo
AU - Park, Hyun Chang
AU - Yoon, Yong Soon
N1 - Publisher Copyright:
© 1999 IEEE.
PY - 1999
Y1 - 1999
N2 - In this paper GaAs power MESFETs and a passive device library were developed, and used in the realization of an S-band MMIC power amplifier. The bonding line component was considered in the design of the amplifier. S21 and S11, were 30 dB and-13.8 dB, respectively, according to simulation. The amplifier was fabricated by a seven-mask process, and bonded to a test fixture. At the center frequency of 2.45 GHz, S21, and S11, were measured to be 29.6 dB and-15.0 dB, respectively. The chip size was 1.8 mm×0.9 mm.
AB - In this paper GaAs power MESFETs and a passive device library were developed, and used in the realization of an S-band MMIC power amplifier. The bonding line component was considered in the design of the amplifier. S21 and S11, were 30 dB and-13.8 dB, respectively, according to simulation. The amplifier was fabricated by a seven-mask process, and bonded to a test fixture. At the center frequency of 2.45 GHz, S21, and S11, were measured to be 29.6 dB and-15.0 dB, respectively. The chip size was 1.8 mm×0.9 mm.
UR - http://www.scopus.com/inward/record.url?scp=34547169182&partnerID=8YFLogxK
U2 - 10.1109/TENCON.1999.818588
DO - 10.1109/TENCON.1999.818588
M3 - Conference contribution
AN - SCOPUS:34547169182
T3 - IEEE Region 10 Annual International Conference, Proceedings/TENCON
SP - 994
EP - 997
BT - IEEE Region 10 Annual International Conference, Proceedings/TENCON
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 1999 IEEE Region 10 Conference, TENCON 1999
Y2 - 15 September 1999 through 17 September 1999
ER -