Design of a small area and low power CMOS D/A converter based on the alpha-power law MOSFET model

Daeyoon Kim, Sanghoon Hwang, Heewon Kang, Seungjin Yeo, Dubok Lee, Junho Moon, Minkyu Song

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

While the CMOS analog circuits can be designed with the minimum-gate-length of the fabrication process in the Alpha-Power Law MOSFET model, the length of a MOSFET gate has been chosen to be a larger scale than the minimum-gate-length in the conventional Shockley's square model. In this paper, we describe a 6-b 100MSPS CMOS current steering Digital-to-Analog Converter (DAC) with the Alpha-Power Law model. In order to improve the matching characteristics of the DAC current cell, moreover, we introduce a new and unique adaptive-control- switch (ACS) and a common current cell layout technique using a tournament algorithm. The prototype circuit has been fabricated with a Samsung 1.8V, 0.18μm, 1-poly, 5-metal CMOS technology. It occupies 0.52mm2 of silicon area with 15.8mW power consumption. The fabricated chip area and the measured power dissipation are reduced by 30% and 25% over conventional ones, respectively.

Original languageEnglish
Title of host publicationProceedings of the 15th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2008
Pages259-262
Number of pages4
DOIs
StatePublished - 2008
Event15th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2008 - St. Julian's, Malta
Duration: 31 Aug 20083 Sep 2008

Publication series

NameProceedings of the 15th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2008

Conference

Conference15th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2008
Country/TerritoryMalta
CitySt. Julian's
Period31/08/083/09/08

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