Design of normally-off GaN-based T-gate with Drain-Field-Plate (TGDFP) HEMT for power and RF applications

Mansoor Ali Khan; Hyun Chang Park

doi:10.1587/elex.11.20140163

Design of normally-off GaN-based T-gate with Drain-Field-Plate (TGDFP) HEMT for power and RF applications

Mansoor Ali Khan, Hyun Chang Park

Department of Electronics & Electrical Engineering

Dongguk University

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

In this paper, an effective T-gate with Drain-Field-Plate (TGDFP) technology is used in GaN-based HEMT for high breakdown voltage of 500V and drain current of 540mA/mm. Silvaco TCAD simulation showed that normally-off TGDFP HEMT with recessed gate length of 0.5 μm exhibited high threshold voltage up to +1V and transconductance of 140mS/mm along with frequency operation in Sband (~3GHz). The proposed lateral TGDFP HEMT provides desirable features for both Power and RF applications.

Original language	English
Article number	20140163
Journal	IEICE Electronics Express
Volume	11
Issue number	6
DOIs	https://doi.org/10.1587/elex.11.20140163
State	Published - 14 Mar 2014

Keywords

Field-plate (FP)
GaN
HEMT
Lateral
Power
RF
TGDFP

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abstract = "In this paper, an effective T-gate with Drain-Field-Plate (TGDFP) technology is used in GaN-based HEMT for high breakdown voltage of 500V and drain current of 540mA/mm. Silvaco TCAD simulation showed that normally-off TGDFP HEMT with recessed gate length of 0.5 μm exhibited high threshold voltage up to +1V and transconductance of 140mS/mm along with frequency operation in Sband (~3GHz). The proposed lateral TGDFP HEMT provides desirable features for both Power and RF applications.",

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AU - Park, Hyun Chang

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Y1 - 2014/3/14

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AB - In this paper, an effective T-gate with Drain-Field-Plate (TGDFP) technology is used in GaN-based HEMT for high breakdown voltage of 500V and drain current of 540mA/mm. Silvaco TCAD simulation showed that normally-off TGDFP HEMT with recessed gate length of 0.5 μm exhibited high threshold voltage up to +1V and transconductance of 140mS/mm along with frequency operation in Sband (~3GHz). The proposed lateral TGDFP HEMT provides desirable features for both Power and RF applications.

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KW - GaN

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KW - Lateral

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KW - RF

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Design of normally-off GaN-based T-gate with Drain-Field-Plate (TGDFP) HEMT for power and RF applications

Abstract

Keywords

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