TY - GEN
T1 - Detection of strain minimization in Hf-based gate dielectrics by X-ray absorption and non-linear optical second harmonic generation spectroscopy
AU - Gundogdu, K.
AU - Lucovsky, G.
AU - Chung, K. B.
AU - Kim, J.
AU - Nordlund, D.
PY - 2009
Y1 - 2009
N2 - In order to move circuits and systems on a chip to higher levels of integration as required by ULSI technology, it becomes increasing more important to minimize local bond and macroscopic strain in CMOS and advanced CMOS devices. This paper combines linear and non-linear spectroscopic methods and theory to study strain minimization in non-crystalline and nanocrystalline Hf-based high-k dielectrics.
AB - In order to move circuits and systems on a chip to higher levels of integration as required by ULSI technology, it becomes increasing more important to minimize local bond and macroscopic strain in CMOS and advanced CMOS devices. This paper combines linear and non-linear spectroscopic methods and theory to study strain minimization in non-crystalline and nanocrystalline Hf-based high-k dielectrics.
UR - http://www.scopus.com/inward/record.url?scp=67650653807&partnerID=8YFLogxK
U2 - 10.1109/ULIS.2009.4897571
DO - 10.1109/ULIS.2009.4897571
M3 - Conference contribution
AN - SCOPUS:67650653807
SN - 9781424437054
T3 - Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009
SP - 201
EP - 204
BT - Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009
T2 - 10th International Conference on ULtimate Integration of Silicon, ULIS 2009
Y2 - 18 March 2009 through 20 March 2009
ER -