Detection of strain minimization in Hf-based gate dielectrics by X-ray absorption and non-linear optical second harmonic generation spectroscopy

K. Gundogdu, G. Lucovsky, K. B. Chung, J. Kim, D. Nordlund

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In order to move circuits and systems on a chip to higher levels of integration as required by ULSI technology, it becomes increasing more important to minimize local bond and macroscopic strain in CMOS and advanced CMOS devices. This paper combines linear and non-linear spectroscopic methods and theory to study strain minimization in non-crystalline and nanocrystalline Hf-based high-k dielectrics.

Original languageEnglish
Title of host publicationProceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009
Pages201-204
Number of pages4
DOIs
StatePublished - 2009
Event10th International Conference on ULtimate Integration of Silicon, ULIS 2009 - Aachen, Germany
Duration: 18 Mar 200920 Mar 2009

Publication series

NameProceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009

Conference

Conference10th International Conference on ULtimate Integration of Silicon, ULIS 2009
Country/TerritoryGermany
CityAachen
Period18/03/0920/03/09

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