Determination of minority carrier lifetime and Interface trap density in Ge MIS Capacitors

C. Mahata; M. K. Bera; P. K. Bose; C. K. Maiti

doi:10.1109/IWPSD.2007.4472481

Determination of minority carrier lifetime and Interface trap density in Ge MIS Capacitors

C. Mahata
, M. K. Bera
, P. K. Bose
, C. K. Maiti

Indian Institute of Technology Kharagpur
City University of Hong Kong
Jadavpur University
IEEE

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

Ultra thin higb-k ZrO₂ films (14 nm) have been deposited on Germanium at a low temperature (∼150°C) using microwave Plasma Enhanced Chemical Vapor Deposition (PECVD) technique. Several samples were NO-plasma nitrided before deposition of the high-k films to minimize the surface roughness and interdiffusion of germanium. Using Capacitance-time (C-t) technique the value of bulk generation lifetime from the slope of the Zerbst plot is found to be 11μs for Ge. Conductance method, based on variable frequency C-V and G-V measurements, was used to compare the interface trap density D_it for ZrO₂/GeO₂/Ge and ZrO₂/GeO_xN _y/Ge MIS capacitors. The calculated doping concentration (N _A) from high frequency C-V is calculated to be ∼2×1 ¹⁵ cm^-3.

Original language	English
Title of host publication	Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD
Pages	177-180
Number of pages	4
DOIs	https://doi.org/10.1109/IWPSD.2007.4472481
State	Published - 2007
Event	14th International Workshop on the Physics of Semiconductor Devices, IWPSD - Mumbai, India Duration: 16 Dec 2007 → 20 Dec 2007

Publication series

Name	Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD

Conference

Conference	14th International Workshop on the Physics of Semiconductor Devices, IWPSD
Country/Territory	India
City	Mumbai
Period	16/12/07 → 20/12/07

Keywords

Germanium
Interface trap density
Minority carrier lifetime

Access to Document

10.1109/IWPSD.2007.4472481

Cite this

Mahata, C., Bera, M. K., Bose, P. K., & Maiti, C. K. (2007). Determination of minority carrier lifetime and Interface trap density in Ge MIS Capacitors. In Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD (pp. 177-180). Article 4472481 (Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD). https://doi.org/10.1109/IWPSD.2007.4472481

@inproceedings{a285cc5d698b44dca783afcbd483eb6a,

title = "Determination of minority carrier lifetime and Interface trap density in Ge MIS Capacitors",

abstract = "Ultra thin higb-k ZrO2 films (14 nm) have been deposited on Germanium at a low temperature (∼150°C) using microwave Plasma Enhanced Chemical Vapor Deposition (PECVD) technique. Several samples were NO-plasma nitrided before deposition of the high-k films to minimize the surface roughness and interdiffusion of germanium. Using Capacitance-time (C-t) technique the value of bulk generation lifetime from the slope of the Zerbst plot is found to be 11μs for Ge. Conductance method, based on variable frequency C-V and G-V measurements, was used to compare the interface trap density Dit for ZrO2/GeO2/Ge and ZrO2/GeOxN y/Ge MIS capacitors. The calculated doping concentration (N A) from high frequency C-V is calculated to be ∼2{\texttimes}1 15 cm-3.",

keywords = "Germanium, Interface trap density, Minority carrier lifetime",

author = "C. Mahata and Bera, \{M. K.\} and Bose, \{P. K.\} and Maiti, \{C. K.\}",

year = "2007",

doi = "10.1109/IWPSD.2007.4472481",

language = "English",

isbn = "9781424417285",

series = "Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD",

pages = "177--180",

booktitle = "Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD",

note = "14th International Workshop on the Physics of Semiconductor Devices, IWPSD ; Conference date: 16-12-2007 Through 20-12-2007",

}

Mahata, C, Bera, MK, Bose, PK & Maiti, CK 2007, Determination of minority carrier lifetime and Interface trap density in Ge MIS Capacitors. in Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD., 4472481, Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD, pp. 177-180, 14th International Workshop on the Physics of Semiconductor Devices, IWPSD, Mumbai, India, 16/12/07. https://doi.org/10.1109/IWPSD.2007.4472481

Determination of minority carrier lifetime and Interface trap density in Ge MIS Capacitors. / Mahata, C.; Bera, M. K.; Bose, P. K. et al.
Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD. 2007. p. 177-180 4472481 (Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Determination of minority carrier lifetime and Interface trap density in Ge MIS Capacitors

AU - Mahata, C.

AU - Bera, M. K.

AU - Bose, P. K.

AU - Maiti, C. K.

PY - 2007

Y1 - 2007

N2 - Ultra thin higb-k ZrO2 films (14 nm) have been deposited on Germanium at a low temperature (∼150°C) using microwave Plasma Enhanced Chemical Vapor Deposition (PECVD) technique. Several samples were NO-plasma nitrided before deposition of the high-k films to minimize the surface roughness and interdiffusion of germanium. Using Capacitance-time (C-t) technique the value of bulk generation lifetime from the slope of the Zerbst plot is found to be 11μs for Ge. Conductance method, based on variable frequency C-V and G-V measurements, was used to compare the interface trap density Dit for ZrO2/GeO2/Ge and ZrO2/GeOxN y/Ge MIS capacitors. The calculated doping concentration (N A) from high frequency C-V is calculated to be ∼2×1 15 cm-3.

AB - Ultra thin higb-k ZrO2 films (14 nm) have been deposited on Germanium at a low temperature (∼150°C) using microwave Plasma Enhanced Chemical Vapor Deposition (PECVD) technique. Several samples were NO-plasma nitrided before deposition of the high-k films to minimize the surface roughness and interdiffusion of germanium. Using Capacitance-time (C-t) technique the value of bulk generation lifetime from the slope of the Zerbst plot is found to be 11μs for Ge. Conductance method, based on variable frequency C-V and G-V measurements, was used to compare the interface trap density Dit for ZrO2/GeO2/Ge and ZrO2/GeOxN y/Ge MIS capacitors. The calculated doping concentration (N A) from high frequency C-V is calculated to be ∼2×1 15 cm-3.

KW - Germanium

KW - Interface trap density

KW - Minority carrier lifetime

UR - https://www.scopus.com/pages/publications/49749112380

U2 - 10.1109/IWPSD.2007.4472481

DO - 10.1109/IWPSD.2007.4472481

M3 - Conference contribution

AN - SCOPUS:49749112380

SN - 9781424417285

T3 - Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD

SP - 177

EP - 180

BT - Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD

T2 - 14th International Workshop on the Physics of Semiconductor Devices, IWPSD

Y2 - 16 December 2007 through 20 December 2007

ER -

Mahata C, Bera MK, Bose PK, Maiti CK. Determination of minority carrier lifetime and Interface trap density in Ge MIS Capacitors. In Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD. 2007. p. 177-180. 4472481. (Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD). doi: 10.1109/IWPSD.2007.4472481

Determination of minority carrier lifetime and Interface trap density in Ge MIS Capacitors

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