Device instability of postannealed TiOx thin-film transistors under gate bias stresses

Byung Du Ahn, Kyung Chul Ok, Jin Seong Park, Kwun Bum Chung

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

This paper investigates the negative bias instability (NBS) and positive bias instability (PBS) of titanium oxide (TiOx) thin-film transistors (TFTs) with different annealing temperatures. Structural analyses suggested that TiOx films annealed at 450 and 550 °C had average grain sizes of 200 and 400 nm, respectively. A TiOx TFT annealed at 550 °C exhibited respective threshold voltage (Vth) shifts of only -1.4 and 10.2 V under NBS and PBS conditions. The origin of the instability was found to be a charge trapping mechanism caused by different grain sizes, boundaries, and changes in band edge states below the conduction band, which acted as electron and hole trap sites.

Original languageEnglish
Article number021204
JournalJournal of Vacuum Science and Technology B
Volume31
Issue number2
DOIs
StatePublished - Mar 2013

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