DIBL in short-channel strained-Si n-MOSFET

S. S. Mahato; P. Chakraborty; T. K. Maiti; M. K. Bera; C. Mahata; M. Sengupta; A. Chakraborty; S. K. Sarkar; C. K. Maiti

doi:10.1109/IPFA.2008.4588186

DIBL in short-channel strained-Si n-MOSFET

S. S. Mahato, P. Chakraborty, T. K. Maiti, M. K. Bera, C. Mahata, M. Sengupta, A. Chakraborty, S. K. Sarkar, C. K. Maiti

Department of Electronics & Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

10 Scopus citations

Abstract

Drain-induced barrier lowering in substrate-induced strained-Si n-MOSFETs has been investigated. The variation of subthreshold swing as a function of both the gate length and gate to source voltage has also been examined.

Original language	English
Title of host publication	2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
DOIs	https://doi.org/10.1109/IPFA.2008.4588186
State	Published - 2008
Event	2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA - Singapore, Singapore Duration: 7 Jul 2008 → 11 Jul 2008

Publication series

Name	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Conference

Conference	2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Country/Territory	Singapore
City	Singapore
Period	7/07/08 → 11/07/08

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10.1109/IPFA.2008.4588186

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Mahato, S. S., Chakraborty, P., Maiti, T. K., Bera, M. K., Mahata, C., Sengupta, M., Chakraborty, A., Sarkar, S. K., & Maiti, C. K. (2008). DIBL in short-channel strained-Si n-MOSFET. In 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA Article 4588186 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). https://doi.org/10.1109/IPFA.2008.4588186

@inproceedings{7143383e18124e9b98dc773f86025177,

title = "DIBL in short-channel strained-Si n-MOSFET",

abstract = "Drain-induced barrier lowering in substrate-induced strained-Si n-MOSFETs has been investigated. The variation of subthreshold swing as a function of both the gate length and gate to source voltage has also been examined.",

author = "Mahato, {S. S.} and P. Chakraborty and Maiti, {T. K.} and Bera, {M. K.} and C. Mahata and M. Sengupta and A. Chakraborty and Sarkar, {S. K.} and Maiti, {C. K.}",

year = "2008",

doi = "10.1109/IPFA.2008.4588186",

language = "English",

isbn = "1424420393",

series = "Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

booktitle = "2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA",

note = "2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA ; Conference date: 07-07-2008 Through 11-07-2008",

}

Mahato, SS, Chakraborty, P, Maiti, TK, Bera, MK, Mahata, C, Sengupta, M, Chakraborty, A, Sarkar, SK & Maiti, CK 2008, DIBL in short-channel strained-Si n-MOSFET. in 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA., 4588186, Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA, Singapore, Singapore, 7/07/08. https://doi.org/10.1109/IPFA.2008.4588186

DIBL in short-channel strained-Si n-MOSFET. / Mahato, S. S.; Chakraborty, P.; Maiti, T. K. et al.
2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA. 2008. 4588186 (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - DIBL in short-channel strained-Si n-MOSFET

AU - Mahato, S. S.

AU - Chakraborty, P.

AU - Maiti, T. K.

AU - Bera, M. K.

AU - Mahata, C.

AU - Sengupta, M.

AU - Chakraborty, A.

AU - Sarkar, S. K.

AU - Maiti, C. K.

PY - 2008

Y1 - 2008

N2 - Drain-induced barrier lowering in substrate-induced strained-Si n-MOSFETs has been investigated. The variation of subthreshold swing as a function of both the gate length and gate to source voltage has also been examined.

AB - Drain-induced barrier lowering in substrate-induced strained-Si n-MOSFETs has been investigated. The variation of subthreshold swing as a function of both the gate length and gate to source voltage has also been examined.

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DO - 10.1109/IPFA.2008.4588186

M3 - Conference contribution

AN - SCOPUS:51949094426

SN - 1424420393

SN - 9781424420391

T3 - Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

BT - 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

T2 - 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Y2 - 7 July 2008 through 11 July 2008

ER -

Mahato SS, Chakraborty P, Maiti TK, Bera MK, Mahata C, Sengupta M et al. DIBL in short-channel strained-Si n-MOSFET. In 2008 15th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA. 2008. 4588186. (Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA). doi: 10.1109/IPFA.2008.4588186

DIBL in short-channel strained-Si n-MOSFET

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