Dielectric properties of Mn-doped bst thin films for microwave application

Ran Young Kim; Hyun Suk Kim; Mi Hwa Lim; Ho Gi Kim; Il Doo Kim

doi:10.1080/10584580490895103

Dielectric properties of Mn-doped bst thin films for microwave application

Ran Young Kim, Hyun Suk Kim, Mi Hwa Lim, Ho Gi Kim, Il Doo Kim

Department of Energy and Materials Engineering

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

In this letter, we report on the effect of Mn doping on the tunability and dielectric loss of Ba_0.6Sr_0.4TiO₃ thin films at low frequency (100 kHz) and at microwave frequency (3.5 GHz), respectively. Perovskite Ba_0.6Sr_0.4TiO₃ thin films were deposited on Pt/TiO₂/SiO₂/Si and MgO single crystal substrates by pulsed laser deposition. At an applied electric field of 150 kV/cm, the BST films (0, 1, 3, 5 mol% Mn doped) grown on Pt/TiO ₂/SiO₂/Si substrate snowed the tunability value within the range from 46% to 49%. With 3% Mn doped BST thin films, results gave a tunability of 49% and a loss tangent as low as 0.0158 and the highest figure of merit of about 31. The microwave properties of BST films grown on MgO substrate were measured using interdigital capacitors (IDC) structure at 3.5 GHz. 3 mol% Mn doped BST also showed better tunability (27.4%) compared to that (11.6%) of undoped BST film. It is suggested that 3 mol% Mn doped BST film is effective candidate for high performance tunable device applications.

Original language	English
Pages (from-to)	195-204
Number of pages	10
Journal	Integrated Ferroelectrics
Volume	66
DOIs	https://doi.org/10.1080/10584580490895103
State	Published - 2004

Keywords

BST
Microwave
Mn doping
Tunable device

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title = "Dielectric properties of Mn-doped bst thin films for microwave application",

abstract = "In this letter, we report on the effect of Mn doping on the tunability and dielectric loss of Ba0.6Sr0.4TiO3 thin films at low frequency (100 kHz) and at microwave frequency (3.5 GHz), respectively. Perovskite Ba0.6Sr0.4TiO3 thin films were deposited on Pt/TiO2/SiO2/Si and MgO single crystal substrates by pulsed laser deposition. At an applied electric field of 150 kV/cm, the BST films (0, 1, 3, 5 mol% Mn doped) grown on Pt/TiO 2/SiO2/Si substrate snowed the tunability value within the range from 46% to 49%. With 3% Mn doped BST thin films, results gave a tunability of 49% and a loss tangent as low as 0.0158 and the highest figure of merit of about 31. The microwave properties of BST films grown on MgO substrate were measured using interdigital capacitors (IDC) structure at 3.5 GHz. 3 mol% Mn doped BST also showed better tunability (27.4%) compared to that (11.6%) of undoped BST film. It is suggested that 3 mol% Mn doped BST film is effective candidate for high performance tunable device applications.",

keywords = "BST, Microwave, Mn doping, Tunable device",

author = "Kim, {Ran Young} and Kim, {Hyun Suk} and Lim, {Mi Hwa} and Kim, {Ho Gi} and Kim, {Il Doo}",

year = "2004",

doi = "10.1080/10584580490895103",

language = "English",

volume = "66",

pages = "195--204",

journal = "Integrated Ferroelectrics",

issn = "1058-4587",

publisher = "Taylor and Francis Ltd.",

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TY - JOUR

T1 - Dielectric properties of Mn-doped bst thin films for microwave application

AU - Kim, Ran Young

AU - Kim, Hyun Suk

AU - Lim, Mi Hwa

AU - Kim, Ho Gi

AU - Kim, Il Doo

PY - 2004

Y1 - 2004

N2 - In this letter, we report on the effect of Mn doping on the tunability and dielectric loss of Ba0.6Sr0.4TiO3 thin films at low frequency (100 kHz) and at microwave frequency (3.5 GHz), respectively. Perovskite Ba0.6Sr0.4TiO3 thin films were deposited on Pt/TiO2/SiO2/Si and MgO single crystal substrates by pulsed laser deposition. At an applied electric field of 150 kV/cm, the BST films (0, 1, 3, 5 mol% Mn doped) grown on Pt/TiO 2/SiO2/Si substrate snowed the tunability value within the range from 46% to 49%. With 3% Mn doped BST thin films, results gave a tunability of 49% and a loss tangent as low as 0.0158 and the highest figure of merit of about 31. The microwave properties of BST films grown on MgO substrate were measured using interdigital capacitors (IDC) structure at 3.5 GHz. 3 mol% Mn doped BST also showed better tunability (27.4%) compared to that (11.6%) of undoped BST film. It is suggested that 3 mol% Mn doped BST film is effective candidate for high performance tunable device applications.

AB - In this letter, we report on the effect of Mn doping on the tunability and dielectric loss of Ba0.6Sr0.4TiO3 thin films at low frequency (100 kHz) and at microwave frequency (3.5 GHz), respectively. Perovskite Ba0.6Sr0.4TiO3 thin films were deposited on Pt/TiO2/SiO2/Si and MgO single crystal substrates by pulsed laser deposition. At an applied electric field of 150 kV/cm, the BST films (0, 1, 3, 5 mol% Mn doped) grown on Pt/TiO 2/SiO2/Si substrate snowed the tunability value within the range from 46% to 49%. With 3% Mn doped BST thin films, results gave a tunability of 49% and a loss tangent as low as 0.0158 and the highest figure of merit of about 31. The microwave properties of BST films grown on MgO substrate were measured using interdigital capacitors (IDC) structure at 3.5 GHz. 3 mol% Mn doped BST also showed better tunability (27.4%) compared to that (11.6%) of undoped BST film. It is suggested that 3 mol% Mn doped BST film is effective candidate for high performance tunable device applications.

KW - BST

KW - Microwave

KW - Mn doping

KW - Tunable device

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U2 - 10.1080/10584580490895103

DO - 10.1080/10584580490895103

M3 - Article

AN - SCOPUS:28844474625

SN - 1058-4587

VL - 66

SP - 195

EP - 204

JO - Integrated Ferroelectrics

JF - Integrated Ferroelectrics

ER -

Dielectric properties of Mn-doped bst thin films for microwave application

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Keywords

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