Dielectric property and breakdown study of metal-insulator-metal capacitor

M. K. Hota, C. Mahata, S. Mallik, C. K. Sarkar, C. K. Maiti

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Advanced metal-insulator-metal capacitors with ultra thin (EOT~2.3-5.3nm) RF sputterdeposited TaAlOx dielectric layers having excellent electrical properties have been fabricated. With low FCC value, the small change in quadratic VCC value in hysteresis curve is also found which shows a good stability of MIM capacitor. The Weibull distribution function, which is based on the weakest-link theory, is employed to analyze the effect of EOT on the breakdown of the MIM capacitors.

Original languageEnglish
Title of host publicationCodec - 2009 - 4th International Conference on Computers and Devices for Communication
StatePublished - 2009
Event4th International Conference on Computers and Devices for Communication, Codec 2009 - Kolkata, India
Duration: 14 Dec 200916 Dec 2009

Publication series

NameCodec - 2009 - 4th International Conference on Computers and Devices for Communication

Conference

Conference4th International Conference on Computers and Devices for Communication, Codec 2009
Country/TerritoryIndia
CityKolkata
Period14/12/0916/12/09

Keywords

  • High-k
  • Hysteresis
  • MIM capacitor
  • TaAlO
  • Weibull

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