TY - JOUR
T1 - Difluorobenzothiadiazole and Selenophene-Based Conjugated Polymer Demonstrating an Effective Hole Mobility Exceeding 5 cm2 V-1 s-1 with Solid-State Electrolyte Dielectric
AU - Nketia-Yawson, Benjamin
AU - Jung, A. Ra
AU - Nguyen, Hieu Dinh
AU - Lee, Kyung Koo
AU - Kim, Bongsoo
AU - Noh, Yong Young
N1 - Publisher Copyright:
© 2018 American Chemical Society.
PY - 2018/9/26
Y1 - 2018/9/26
N2 - We report synthesis of a new poly(4-(4,4-bis(2-ethylhexyl)-4H-silolo[3,2-b:4,5-b′]dithiophene-2-yl)-7-(4,4-bis(2-ethylhexyl)-6-(selenophene-2-yl)-4H-silolo[3,2-b:4,5-b′]dithiophene-2-yl)-5,6-difluorobenzo[c][1,2,5]thiadiazole (PDFDSe) polymer based on planar 4,7-bis(4,4-bis(2-ethylhexyl)-4H-silolo[3,2-b:4,5-b′]dithiophen-2-yl)-5,6-difluorobenzo[c][1,2,5]thiadiazole (DFD) moieties and selenophene linkages. The planar backboned PDFDSe polymer exhibits highest occupied molecular orbital and lowest unoccupied molecular orbital levels of -5.13 and -3.56 eV, respectively, and generates well-packed highly crystalline states in films with exclusive edge-on orientations. PDFDSe thin film was incorporated as a channel material in top-gate bottom-contact organic thin-film transistor with a solid-state electrolyte gate insulator (SEGI) composed of poly(vinylidene difluoride-trifluoroethylene)/poly(vinylidene fluoride-co-hexafluroropropylene)/1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide, which exhibited a remarkably high hole mobility up to μ = 20.3 cm2 V-1 s-1 corresponding to effective hole mobility exceeding 5 cm2 V-1 s-1 and a very low threshold voltage of -1 V. These device characteristics are associated with the high carrier density in the semiconducting channel region, induced by the high capacitance of the SEGI layer. The excellent carrier mobility from the PDFDSe/SEGI device demonstrates a great potential of semiconducting polymer thin-film transistors as electronic components in future electronic applications.
AB - We report synthesis of a new poly(4-(4,4-bis(2-ethylhexyl)-4H-silolo[3,2-b:4,5-b′]dithiophene-2-yl)-7-(4,4-bis(2-ethylhexyl)-6-(selenophene-2-yl)-4H-silolo[3,2-b:4,5-b′]dithiophene-2-yl)-5,6-difluorobenzo[c][1,2,5]thiadiazole (PDFDSe) polymer based on planar 4,7-bis(4,4-bis(2-ethylhexyl)-4H-silolo[3,2-b:4,5-b′]dithiophen-2-yl)-5,6-difluorobenzo[c][1,2,5]thiadiazole (DFD) moieties and selenophene linkages. The planar backboned PDFDSe polymer exhibits highest occupied molecular orbital and lowest unoccupied molecular orbital levels of -5.13 and -3.56 eV, respectively, and generates well-packed highly crystalline states in films with exclusive edge-on orientations. PDFDSe thin film was incorporated as a channel material in top-gate bottom-contact organic thin-film transistor with a solid-state electrolyte gate insulator (SEGI) composed of poly(vinylidene difluoride-trifluoroethylene)/poly(vinylidene fluoride-co-hexafluroropropylene)/1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide, which exhibited a remarkably high hole mobility up to μ = 20.3 cm2 V-1 s-1 corresponding to effective hole mobility exceeding 5 cm2 V-1 s-1 and a very low threshold voltage of -1 V. These device characteristics are associated with the high carrier density in the semiconducting channel region, induced by the high capacitance of the SEGI layer. The excellent carrier mobility from the PDFDSe/SEGI device demonstrates a great potential of semiconducting polymer thin-film transistors as electronic components in future electronic applications.
KW - carrier mobility
KW - chain orientation
KW - donor-acceptor conjugated polymers
KW - organic thin-film transistors
KW - solid-state electrolyte
UR - http://www.scopus.com/inward/record.url?scp=85053608501&partnerID=8YFLogxK
U2 - 10.1021/acsami.8b14176
DO - 10.1021/acsami.8b14176
M3 - Article
C2 - 30129359
AN - SCOPUS:85053608501
SN - 1944-8244
VL - 10
SP - 32492
EP - 32500
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 38
ER -