Diluted magnetic semiconductor of p-type InMnP:Zn epilayer

Yoon Shon, H. C. Jeon, Y. S. Park, Seung Joo Lee, D. Y. Kim, H. S. Kim, T. W. Kang, Y. J. Park, Chong S. Yoon, Chang Kyung Kim, E. K. Kim, Yongmin Kim, Y. D. Woo

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11 Scopus citations

Abstract

We investigated the characteristics of p-type InMnP:Zn epilayer using various measurements so as to compare its properties with those of bulk InMnP. InP:Zn epilayers of p-type were prepared by metal organic chemical vapor deposition and subsequently doped with Mn by heat treatment after the evaporation of Mn on top of InP:Zn epilayers using a molecular-beam epitaxy system. The samples were structurally characterized by X-ray diffraction. No evidence of secondary phase formation such as MnP, MnIn, and MnZn within the InMnP:Zn epilayer was found, and single-phase InMnP:Zn epilayer was well formed. The compositional results of energy dispersive X-ray peak displayed injected concentration of Mn near 1.5% and 3.0%. The results of photoluminescence measurement showed that optical broad transitions related to Mn appeared near 1.187, 1.198, and 1.227 eV by the injection of Mn into the InP:Zn epilayer. Clear ferromagnetic hysteresis loops were observed at 10 K and the temperature-dependent magnetization of the samples with the Mn concentration near 1.5% showed ferromagnetic behavior persisting upto 390 and 300 K and persisting upto 370 K for the sample near 3.0%. It is found that in this system the proper annealing temperature is 450 °C. p-type InMnP:Zn epilayers represent a ferromagnet with superior properties (Hc=311G, saturation magnetization M=7.6×10-5emu) in comparison with InMnP:Zn bulk (Hc=134G, M=4.1×10-5emu)

Original languageEnglish
Pages (from-to)501-507
Number of pages7
JournalJournal of Crystal Growth
Volume281
Issue number2-4
DOIs
StatePublished - 1 Aug 2005

Keywords

  • A1. Diffusion
  • A3. Metalorganic chemical vapor deposition
  • B2. Semiconducting indium phosphide

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