Diluted magnetic semiconductor of p-type InMnP:Zn epilayer

We investigated the characteristics of p-type InMnP:Zn epilayer using various measurements so as to compare its properties with those of bulk InMnP. InP:Zn epilayers of p-type were prepared by metal organic chemical vapor deposition and subsequently doped with Mn by heat treatment after the evaporation of Mn on top of InP:Zn epilayers using a molecular-beam epitaxy system. The samples were structurally characterized by X-ray diffraction. No evidence of secondary phase formation such as MnP, MnIn, and MnZn within the InMnP:Zn epilayer was found, and single-phase InMnP:Zn epilayer was well formed. The compositional results of energy dispersive X-ray peak displayed injected concentration of Mn near 1.5% and 3.0%. The results of photoluminescence measurement showed that optical broad transitions related to Mn appeared near 1.187, 1.198, and 1.227 eV by the injection of Mn into the InP:Zn epilayer. Clear ferromagnetic hysteresis loops were observed at 10 K and the temperature-dependent magnetization of the samples with the Mn concentration near 1.5% showed ferromagnetic behavior persisting upto 390 and 300 K and persisting upto 370 K for the sample near 3.0%. It is found that in this system the proper annealing temperature is 450 °C. p-type InMnP:Zn epilayers represent a ferromagnet with superior properties (Hc=311G, saturation magnetization M=7.6×10-5emu) in comparison with InMnP:Zn bulk (Hc=134G, M=4.1×10-5emu)