Direct growth of single-walled carbon nanotubes on conducting ZnO films and its field emission properties

Yo Sep Min; Eun Ju Bae; Un Jeong Kim; Wanjun Park; Cheol Seong Hwang

doi:10.1063/1.2349296

Direct growth of single-walled carbon nanotubes on conducting ZnO films and its field emission properties

Yo Sep Min, Eun Ju Bae, Un Jeong Kim, Wanjun Park, Cheol Seong Hwang

Department of Physics

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

Despite the necessity of direct growth of single-walled carbon nanotubes (SWNTs) on conducting films for versatility of designing device architectures for nanoelectronics and optoelectronics, most of SWNT growths have been carried out on insulating films or supporting materials such as SiO₂ and Al₂O₃. Here, the authors report that conducting ZnO films can be used as both an underlying layer for the SWNT growth and an electrode for device operation. ZnO films with a resistivity in the order of 10^-3 Ω, cm were deposited by atomic layer deposition. SWNTs were directly grown on the ZnO film by water plasma chemical vapor deposition. The authors demonstrate field emission properties from the SWNT/ZnO cathode, of which the turn-on electric field for a current density of 10 μA/cm² and the field enhancement factor are 1.8 V/μm and 3200, respectively.

Original language	English
Article number	113116
Journal	Applied Physics Letters
Volume	89
Issue number	11
DOIs	https://doi.org/10.1063/1.2349296
State	Published - 2006

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Direct growth of single-walled carbon nanotubes on conducting ZnO films and its field emission properties

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