Direct growth of SnO 2 nanowires on WO x thin films

Taekyung Lim, Seung Yoon Ryu, Sanghyun Ju

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Single-crystalline SnO 2 nanowires were directly grown on an amorphous WO x thin film, leading to the formation of nano-scale contacts with a near-Ohmic conductance. The WO x facilitated the diffusion of SnO 2 on the surface of the WO x thin film, and SnO 2 nanowires could be uniformly grown from the diffused SnO 2. The contact properties between the metallic WO x and a semiconducting SnO 2 nanowire were examined. The resistivity of the WO x-SnO 2 nanowire contact was found to be approximately 2.6×10 5Ωcm 2. This was comparable to the resistivity of a contact between an Al electrode and a SnO 2 nanowire with a contact area. A fabricated SnO 2 nanowire transistor exhibited an on-current of approximately 386nA, a threshold voltage of approximately 3.8V, a subthreshold slope of approximately 0.26V/dec and a field-effect mobility of approximately 43cm 2V 1s 1.

Original languageEnglish
Article number485702
JournalNanotechnology
Volume23
Issue number48
DOIs
StatePublished - 7 Dec 2012

Fingerprint

Dive into the research topics of 'Direct growth of SnO 2 nanowires on WO x thin films'. Together they form a unique fingerprint.

Cite this