Abstract
Single-crystalline SnO 2 nanowires were directly grown on an amorphous WO x thin film, leading to the formation of nano-scale contacts with a near-Ohmic conductance. The WO x facilitated the diffusion of SnO 2 on the surface of the WO x thin film, and SnO 2 nanowires could be uniformly grown from the diffused SnO 2. The contact properties between the metallic WO x and a semiconducting SnO 2 nanowire were examined. The resistivity of the WO x-SnO 2 nanowire contact was found to be approximately 2.6×10 5Ωcm 2. This was comparable to the resistivity of a contact between an Al electrode and a SnO 2 nanowire with a contact area. A fabricated SnO 2 nanowire transistor exhibited an on-current of approximately 386nA, a threshold voltage of approximately 3.8V, a subthreshold slope of approximately 0.26V/dec and a field-effect mobility of approximately 43cm 2V 1s 1.
Original language | English |
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Article number | 485702 |
Journal | Nanotechnology |
Volume | 23 |
Issue number | 48 |
DOIs | |
State | Published - 7 Dec 2012 |