Abstract
Memristive heterostructures, composed of reduced graphene oxide with different degree of reduction, were demonstrated through a simple method of ‘direct electron-beam writing’ on graphene oxide. Irradiation with an electron beam at various doses and accelerating voltages made it possible to define high- and low-conductivity graphene-oxide areas. The electron beam-reduced graphene oxide/graphene oxide heterostructure clearly exhibited a nonlinear behavior and a well-controlled resistive switching characteristic at a low operating-voltage range (< 1 V). The proposed memristive heterostructures are promising for highly-efficient digital storage and information process as well as for analogous neuromorphic computations.
Original language | English |
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Pages (from-to) | 237-243 |
Number of pages | 7 |
Journal | Journal of Materials Science and Technology |
Volume | 38 |
DOIs | |
State | Published - 1 Feb 2020 |
Keywords
- Electron beam irradiation
- Graphene oxide
- Memristive heterostructure
- Reduced graphene oxide