Direct patterning of reduced graphene oxide/graphene oxide memristive heterostructures by electron-beam irradiation

Olesya O. Kapitanova, Evgeny V. Emelin, Sergey G. Dorofeev, Pavel V. Evdokimov, Gennady N. Panin, Youngmin Lee, Sejoon Lee

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

Memristive heterostructures, composed of reduced graphene oxide with different degree of reduction, were demonstrated through a simple method of ‘direct electron-beam writing’ on graphene oxide. Irradiation with an electron beam at various doses and accelerating voltages made it possible to define high- and low-conductivity graphene-oxide areas. The electron beam-reduced graphene oxide/graphene oxide heterostructure clearly exhibited a nonlinear behavior and a well-controlled resistive switching characteristic at a low operating-voltage range (< 1 V). The proposed memristive heterostructures are promising for highly-efficient digital storage and information process as well as for analogous neuromorphic computations.

Original languageEnglish
Pages (from-to)237-243
Number of pages7
JournalJournal of Materials Science and Technology
Volume38
DOIs
StatePublished - 1 Feb 2020

Keywords

  • Electron beam irradiation
  • Graphene oxide
  • Memristive heterostructure
  • Reduced graphene oxide

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