Abstract
A challenging issue is to estimate the n-type dopant profiles and, consequently, their diffusivities in shallow Ge n+/p junctions because of their abnormal dopant profiles that do not follow conventional Gaussian-distribution-based diffusion theory. In order to fit the abnormal dopant profiles in shallow junctions, what are due to (1) fast and asymmetric diffusion of n-type dopants and (2) dopant pileup caused by surface back-scattering phenomenon, we propose a new profiling function and verify it by using a fitting algorithm based on the least-squares method. Through this fitting algorithm, we estimate the diffusivity and peak-position values from the raw dopant profile data, and we provide the experimental diffusivity equations as a function of the annealing temperature.
Original language | English |
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Pages (from-to) | 1855-1858 |
Number of pages | 4 |
Journal | Journal of the Korean Physical Society |
Volume | 63 |
Issue number | 10 |
DOIs | |
State | Published - 2013 |
Keywords
- Dopant profile
- Germanium n/p
- Shallow junction