Doping-free silicon thin film solar cells using a vanadium pentoxide window layer and a LiF/Al back electrode

Hyung Hwan Jung, Jung Dae Kwon, Sunghun Lee, Chang Su Kim, Kee Seok Nam, Yongsoo Jeong, Kwun Bum Chung, Seung Yoon Ryu, Tülay Ocak, Aynur Eray, Dong Ho Kim, Sung Gyu Park

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Abstract

This work describes the preparation of a doped layer-free hydrogenated amorphous silicon (a-Si:H) thin film solar cell consisting of a vanadium pentoxide (V2O5-x) window layer, an intrinsic a-Si:H absorber layer, and a lithium fluoride (LiF)/aluminum (Al) back electrode. The large difference between the work functions of the V2O5-x layer and the LiF/Al electrode permitted photogenerated carriers in the i-a-Si:H absorber layer to be effectively separated and collected. The effects of the V2O5-x layer thickness and the oxidation states on the photovoltaic performance were investigated in detail. X-ray photoelectron spectroscopy analysis confirmed that the major species of the sputtered V 2O5-x thin films were V5+ and V4+. Optimization of the V2O5-x window layer yielded a power conversion efficiency of 7.04%, which was comparable to the power conversion efficiency of a typical a-Si:H solar cell (7.09%).

Original languageEnglish
Article number073903
JournalApplied Physics Letters
Volume103
Issue number7
DOIs
StatePublished - 12 Aug 2013

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