Doping-free silicon thin film solar cells using a vanadium pentoxide window layer and a LiF/Al back electrode

Hyung Hwan Jung; Jung Dae Kwon; Sunghun Lee; Chang Su Kim; Kee Seok Nam; Yongsoo Jeong; Kwun Bum Chung; Seung Yoon Ryu; Tülay Ocak; Aynur Eray; Dong Ho Kim; Sung Gyu Park

doi:10.1063/1.4818714

Doping-free silicon thin film solar cells using a vanadium pentoxide window layer and a LiF/Al back electrode

Hyung Hwan Jung
, Jung Dae Kwon
, Sunghun Lee
, Chang Su Kim
, Kee Seok Nam
, Yongsoo Jeong
, Kwun Bum Chung
, Seung Yoon Ryu
, Tülay Ocak
, Aynur Eray
, Dong Ho Kim
, Sung Gyu Park

Department of Physics

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

This work describes the preparation of a doped layer-free hydrogenated amorphous silicon (a-Si:H) thin film solar cell consisting of a vanadium pentoxide (V₂O_5-x) window layer, an intrinsic a-Si:H absorber layer, and a lithium fluoride (LiF)/aluminum (Al) back electrode. The large difference between the work functions of the V₂O_5-x layer and the LiF/Al electrode permitted photogenerated carriers in the i-a-Si:H absorber layer to be effectively separated and collected. The effects of the V₂O_5-x layer thickness and the oxidation states on the photovoltaic performance were investigated in detail. X-ray photoelectron spectroscopy analysis confirmed that the major species of the sputtered V ₂O_5-x thin films were V⁵⁺ and V⁴⁺. Optimization of the V₂O_5-x window layer yielded a power conversion efficiency of 7.04%, which was comparable to the power conversion efficiency of a typical a-Si:H solar cell (7.09%).

Original language	English
Article number	073903
Journal	Applied Physics Letters
Volume	103
Issue number	7
DOIs	https://doi.org/10.1063/1.4818714
State	Published - 12 Aug 2013

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Access to Document

10.1063/1.4818714

Cite this

@article{150ebe246c814f87ad10521813e333f8,

title = "Doping-free silicon thin film solar cells using a vanadium pentoxide window layer and a LiF/Al back electrode",

abstract = "This work describes the preparation of a doped layer-free hydrogenated amorphous silicon (a-Si:H) thin film solar cell consisting of a vanadium pentoxide (V2O5-x) window layer, an intrinsic a-Si:H absorber layer, and a lithium fluoride (LiF)/aluminum (Al) back electrode. The large difference between the work functions of the V2O5-x layer and the LiF/Al electrode permitted photogenerated carriers in the i-a-Si:H absorber layer to be effectively separated and collected. The effects of the V2O5-x layer thickness and the oxidation states on the photovoltaic performance were investigated in detail. X-ray photoelectron spectroscopy analysis confirmed that the major species of the sputtered V 2O5-x thin films were V5+ and V4+. Optimization of the V2O5-x window layer yielded a power conversion efficiency of 7.04\%, which was comparable to the power conversion efficiency of a typical a-Si:H solar cell (7.09\%).",

author = "Jung, \{Hyung Hwan\} and Kwon, \{Jung Dae\} and Sunghun Lee and Kim, \{Chang Su\} and Nam, \{Kee Seok\} and Yongsoo Jeong and Chung, \{Kwun Bum\} and \{Yoon Ryu\}, Seung and T{\"u}lay Ocak and Aynur Eray and Kim, \{Dong Ho\} and Park, \{Sung Gyu\}",

year = "2013",

month = aug,

day = "12",

doi = "10.1063/1.4818714",

language = "English",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Doping-free silicon thin film solar cells using a vanadium pentoxide window layer and a LiF/Al back electrode

AU - Jung, Hyung Hwan

AU - Kwon, Jung Dae

AU - Lee, Sunghun

AU - Kim, Chang Su

AU - Nam, Kee Seok

AU - Jeong, Yongsoo

AU - Chung, Kwun Bum

AU - Yoon Ryu, Seung

AU - Ocak, Tülay

AU - Eray, Aynur

AU - Kim, Dong Ho

AU - Park, Sung Gyu

PY - 2013/8/12

Y1 - 2013/8/12

N2 - This work describes the preparation of a doped layer-free hydrogenated amorphous silicon (a-Si:H) thin film solar cell consisting of a vanadium pentoxide (V2O5-x) window layer, an intrinsic a-Si:H absorber layer, and a lithium fluoride (LiF)/aluminum (Al) back electrode. The large difference between the work functions of the V2O5-x layer and the LiF/Al electrode permitted photogenerated carriers in the i-a-Si:H absorber layer to be effectively separated and collected. The effects of the V2O5-x layer thickness and the oxidation states on the photovoltaic performance were investigated in detail. X-ray photoelectron spectroscopy analysis confirmed that the major species of the sputtered V 2O5-x thin films were V5+ and V4+. Optimization of the V2O5-x window layer yielded a power conversion efficiency of 7.04%, which was comparable to the power conversion efficiency of a typical a-Si:H solar cell (7.09%).

AB - This work describes the preparation of a doped layer-free hydrogenated amorphous silicon (a-Si:H) thin film solar cell consisting of a vanadium pentoxide (V2O5-x) window layer, an intrinsic a-Si:H absorber layer, and a lithium fluoride (LiF)/aluminum (Al) back electrode. The large difference between the work functions of the V2O5-x layer and the LiF/Al electrode permitted photogenerated carriers in the i-a-Si:H absorber layer to be effectively separated and collected. The effects of the V2O5-x layer thickness and the oxidation states on the photovoltaic performance were investigated in detail. X-ray photoelectron spectroscopy analysis confirmed that the major species of the sputtered V 2O5-x thin films were V5+ and V4+. Optimization of the V2O5-x window layer yielded a power conversion efficiency of 7.04%, which was comparable to the power conversion efficiency of a typical a-Si:H solar cell (7.09%).

UR - https://www.scopus.com/pages/publications/84882443632

U2 - 10.1063/1.4818714

DO - 10.1063/1.4818714

M3 - Article

AN - SCOPUS:84882443632

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 073903

ER -

Doping-free silicon thin film solar cells using a vanadium pentoxide window layer and a LiF/Al back electrode

Abstract

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this