TY - JOUR
T1 - Dynamic memristor array with multiple reservoir states for training efficient neuromorphic computing
AU - Noh, Minseo
AU - Ju, Dongyeol
AU - Kim, Sungjun
N1 - Publisher Copyright:
© 2024 The Royal Society of Chemistry.
PY - 2024/7/26
Y1 - 2024/7/26
N2 - In this study, we evaluated the performance of a Pt/Al/TiOy/TiOx/Al2O3/Pt RRAM array device in synaptic and reservoir computing applications. The device exhibited excellent switching characteristics and consistent set processes, along with verifying 100 cycles of DC endurance and cell-to-cell properties. Furthermore, over 104 retention time, the device displayed gradual current decay leading back to its initial high-resistance state, revealing the presence of short-term memory characteristics. Additionally, by leveraging potentiation and depression, paired-pulse facilitation, spike-number-dependent plasticity, spike-amplitude-dependent plasticity, spike-rate-dependent plasticity, and Pavlovian conditioning, we replicated the mechanisms of the biological brain in terms of both short- and long-term memory within our memristor array technology. We also implemented a 4-bit reservoir computing system by leveraging the nonlinear dynamics of the device, adding to its computer-favorable applications. Finally, through analyzing the temporal changes based on a stimulus frequency in a 5 × 5 synaptic arr ay image training process, we concluded that the Pt/Al/TiOy/TiOx/Al2O3/Pt device is suitable for application in neuromorphic systems.
AB - In this study, we evaluated the performance of a Pt/Al/TiOy/TiOx/Al2O3/Pt RRAM array device in synaptic and reservoir computing applications. The device exhibited excellent switching characteristics and consistent set processes, along with verifying 100 cycles of DC endurance and cell-to-cell properties. Furthermore, over 104 retention time, the device displayed gradual current decay leading back to its initial high-resistance state, revealing the presence of short-term memory characteristics. Additionally, by leveraging potentiation and depression, paired-pulse facilitation, spike-number-dependent plasticity, spike-amplitude-dependent plasticity, spike-rate-dependent plasticity, and Pavlovian conditioning, we replicated the mechanisms of the biological brain in terms of both short- and long-term memory within our memristor array technology. We also implemented a 4-bit reservoir computing system by leveraging the nonlinear dynamics of the device, adding to its computer-favorable applications. Finally, through analyzing the temporal changes based on a stimulus frequency in a 5 × 5 synaptic arr ay image training process, we concluded that the Pt/Al/TiOy/TiOx/Al2O3/Pt device is suitable for application in neuromorphic systems.
UR - http://www.scopus.com/inward/record.url?scp=85199954599&partnerID=8YFLogxK
U2 - 10.1039/d4tc02324b
DO - 10.1039/d4tc02324b
M3 - Article
AN - SCOPUS:85199954599
SN - 2050-7526
VL - 12
SP - 13516
EP - 13524
JO - Journal of Materials Chemistry C
JF - Journal of Materials Chemistry C
IS - 34
ER -