Effect of additional nonmagnetic acceptor doping on the resistivity peak and the Curie temperature of Ga1-xMnxAs epitaxial layers

Sh U. Yuldashev; Hyunsik Im; V. Sh Yalishev; C. S. Park; T. W. Kang; Sanghoon Lee; Y. Sasaki; X. Liu; J. K. Furdyna

doi:10.1063/1.1554482

Effect of additional nonmagnetic acceptor doping on the resistivity peak and the Curie temperature of Ga_1-xMn_xAs epitaxial layers

Sh U. Yuldashev
, Hyunsik Im
, V. Sh Yalishev
, C. S. Park
, T. W. Kang
, Sanghoon Lee
, Y. Sasaki
, X. Liu
, J. K. Furdyna

Division of System Semiconductor

Dongguk University
Academy of Sciences of the Republic of Uzbekistan
Korea University
University of Notre Dame

Research output: Contribution to journal › Article › peer-review

63 Scopus citations

Abstract

The effects of additional doping by beryllium (Be) on the properties of Ga_1-xMn_xAs were discussed. It was found that the curie temperature increased with an increase in the Be concentration. The magnetoimpurity scattering model described the temperature dependence of the resistivity at zero magnetic field.

Original language	English
Pages (from-to)	1206-1208
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	8
DOIs	https://doi.org/10.1063/1.1554482
State	Published - 24 Feb 2003

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10.1063/1.1554482

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title = "Effect of additional nonmagnetic acceptor doping on the resistivity peak and the Curie temperature of Ga1-xMnxAs epitaxial layers",

abstract = "The effects of additional doping by beryllium (Be) on the properties of Ga1-xMnxAs were discussed. It was found that the curie temperature increased with an increase in the Be concentration. The magnetoimpurity scattering model described the temperature dependence of the resistivity at zero magnetic field.",

author = "Yuldashev, \{Sh U.\} and Hyunsik Im and Yalishev, \{V. Sh\} and Park, \{C. S.\} and Kang, \{T. W.\} and Sanghoon Lee and Y. Sasaki and X. Liu and Furdyna, \{J. K.\}",

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T1 - Effect of additional nonmagnetic acceptor doping on the resistivity peak and the Curie temperature of Ga1-xMnxAs epitaxial layers

AU - Yuldashev, Sh U.

AU - Im, Hyunsik

AU - Yalishev, V. Sh

AU - Park, C. S.

AU - Kang, T. W.

AU - Lee, Sanghoon

AU - Sasaki, Y.

AU - Liu, X.

AU - Furdyna, J. K.

PY - 2003/2/24

Y1 - 2003/2/24

N2 - The effects of additional doping by beryllium (Be) on the properties of Ga1-xMnxAs were discussed. It was found that the curie temperature increased with an increase in the Be concentration. The magnetoimpurity scattering model described the temperature dependence of the resistivity at zero magnetic field.

AB - The effects of additional doping by beryllium (Be) on the properties of Ga1-xMnxAs were discussed. It was found that the curie temperature increased with an increase in the Be concentration. The magnetoimpurity scattering model described the temperature dependence of the resistivity at zero magnetic field.

UR - https://www.scopus.com/pages/publications/0037463297

U2 - 10.1063/1.1554482

DO - 10.1063/1.1554482

M3 - Article

AN - SCOPUS:0037463297

SN - 0003-6951

VL - 82

SP - 1206

EP - 1208

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Effect of additional nonmagnetic acceptor doping on the resistivity peak and the Curie temperature of Ga_1-xMn_xAs epitaxial layers

Abstract

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