Effect of adsorption time on structural, optical and electronic properties of SILAR deposited CuO thin films

S. Visalakshi; R. Kannan; S. Valanarasu; A. Kathalingam; S. Rajashabala

doi:10.1007/s10854-016-4954-y

Effect of adsorption time on structural, optical and electronic properties of SILAR deposited CuO thin films

S. Visalakshi, R. Kannan, S. Valanarasu, A. Kathalingam, S. Rajashabala

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Deposition of CuO thin films onto glass substrates by SILAR technique changing the adsorption time is reported. Adsorption time dependent variation on structural, optical and electric properties of the films has been analyzed. X-ray diffraction (XRD) pattern of the films have confirmed the polycrystalline monoclinic structure with (002) preferred orientation. Intensity of the XRD peaks is found to increase with the increase of adsorption time. Crystallite size, lattice parameters, defect density and texture coefficient of the film have been calculated using the XRD data. Surface morphology studies of the films done by scanning electron microscopy showed uniform and continuous film with spherical particles. Optical absorption studies of the films have revealed that the optical band gap of the thin films is decreased with the increase of adsorption time and it lies between 2.12–1.91 eV. Hall Effect measurements of the films have shown that the obtained material has p-type conductivity and resistivity values are found to decrease with adsorption time. I–V property of the fabricated p-CuO/n-Si diode has been measured by illuminating the device with a halogen lamp of intensity 200 W and it has shown a maximum open circuit voltage (V_oc) 0.05 V and short-circuit current (I_sc) 0.25 × 10⁻⁶ A.

Original language	English
Pages (from-to)	9179-9185
Number of pages	7
Journal	Journal of Materials Science: Materials in Electronics
Volume	27
Issue number	9
DOIs	https://doi.org/10.1007/s10854-016-4954-y
State	Published - 1 Sep 2016

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title = "Effect of adsorption time on structural, optical and electronic properties of SILAR deposited CuO thin films",

abstract = "Deposition of CuO thin films onto glass substrates by SILAR technique changing the adsorption time is reported. Adsorption time dependent variation on structural, optical and electric properties of the films has been analyzed. X-ray diffraction (XRD) pattern of the films have confirmed the polycrystalline monoclinic structure with (002) preferred orientation. Intensity of the XRD peaks is found to increase with the increase of adsorption time. Crystallite size, lattice parameters, defect density and texture coefficient of the film have been calculated using the XRD data. Surface morphology studies of the films done by scanning electron microscopy showed uniform and continuous film with spherical particles. Optical absorption studies of the films have revealed that the optical band gap of the thin films is decreased with the increase of adsorption time and it lies between 2.12–1.91 eV. Hall Effect measurements of the films have shown that the obtained material has p-type conductivity and resistivity values are found to decrease with adsorption time. I–V property of the fabricated p-CuO/n-Si diode has been measured by illuminating the device with a halogen lamp of intensity 200 W and it has shown a maximum open circuit voltage (Voc) 0.05 V and short-circuit current (Isc) 0.25 × 10−6 A.",

author = "S. Visalakshi and R. Kannan and S. Valanarasu and A. Kathalingam and S. Rajashabala",

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T1 - Effect of adsorption time on structural, optical and electronic properties of SILAR deposited CuO thin films

AU - Visalakshi, S.

AU - Kannan, R.

AU - Valanarasu, S.

AU - Kathalingam, A.

AU - Rajashabala, S.

PY - 2016/9/1

Y1 - 2016/9/1

N2 - Deposition of CuO thin films onto glass substrates by SILAR technique changing the adsorption time is reported. Adsorption time dependent variation on structural, optical and electric properties of the films has been analyzed. X-ray diffraction (XRD) pattern of the films have confirmed the polycrystalline monoclinic structure with (002) preferred orientation. Intensity of the XRD peaks is found to increase with the increase of adsorption time. Crystallite size, lattice parameters, defect density and texture coefficient of the film have been calculated using the XRD data. Surface morphology studies of the films done by scanning electron microscopy showed uniform and continuous film with spherical particles. Optical absorption studies of the films have revealed that the optical band gap of the thin films is decreased with the increase of adsorption time and it lies between 2.12–1.91 eV. Hall Effect measurements of the films have shown that the obtained material has p-type conductivity and resistivity values are found to decrease with adsorption time. I–V property of the fabricated p-CuO/n-Si diode has been measured by illuminating the device with a halogen lamp of intensity 200 W and it has shown a maximum open circuit voltage (Voc) 0.05 V and short-circuit current (Isc) 0.25 × 10−6 A.

AB - Deposition of CuO thin films onto glass substrates by SILAR technique changing the adsorption time is reported. Adsorption time dependent variation on structural, optical and electric properties of the films has been analyzed. X-ray diffraction (XRD) pattern of the films have confirmed the polycrystalline monoclinic structure with (002) preferred orientation. Intensity of the XRD peaks is found to increase with the increase of adsorption time. Crystallite size, lattice parameters, defect density and texture coefficient of the film have been calculated using the XRD data. Surface morphology studies of the films done by scanning electron microscopy showed uniform and continuous film with spherical particles. Optical absorption studies of the films have revealed that the optical band gap of the thin films is decreased with the increase of adsorption time and it lies between 2.12–1.91 eV. Hall Effect measurements of the films have shown that the obtained material has p-type conductivity and resistivity values are found to decrease with adsorption time. I–V property of the fabricated p-CuO/n-Si diode has been measured by illuminating the device with a halogen lamp of intensity 200 W and it has shown a maximum open circuit voltage (Voc) 0.05 V and short-circuit current (Isc) 0.25 × 10−6 A.

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Effect of adsorption time on structural, optical and electronic properties of SILAR deposited CuO thin films

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