Effect of Al2O3 on the operation of SiNX-based MIS RRAMs

A. E. Mavropoulis, N. Vasileiadis, P. Normand, C. Theodorou, G. Ch. Sirakoulis, S. Kim, P. Dimitrakis

Research output: Contribution to journalArticlepeer-review

Abstract

The role of a 3 nm Al2O3 layer on top of stoichiometric LPCVD SiNx MIS RRAM cells is investigated by using various electrical characterization techniques. The conductive filament formation is explained, and a compact model is used to fit the current–voltage curves and find its evolution during each operation cycle. The conduction in SiNx is also studied.

Original languageEnglish
Article number109035
JournalSolid-State Electronics
Volume223
DOIs
StatePublished - Jan 2025

Keywords

  • Aluminum Oxide
  • MIS
  • RRAM
  • ReRAM
  • Resistance switching
  • Silicon Nitride

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