Abstract
The role of a 3 nm Al2O3 layer on top of stoichiometric LPCVD SiNx MIS RRAM cells is investigated by using various electrical characterization techniques. The conductive filament formation is explained, and a compact model is used to fit the current–voltage curves and find its evolution during each operation cycle. The conduction in SiNx is also studied.
Original language | English |
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Article number | 109035 |
Journal | Solid-State Electronics |
Volume | 223 |
DOIs | |
State | Published - Jan 2025 |
Keywords
- Aluminum Oxide
- MIS
- RRAM
- ReRAM
- Resistance switching
- Silicon Nitride