Effect of Al2O3 on the operation of SiNX-based MIS RRAMs

A. E. Mavropoulis; N. Vasileiadis; P. Normand; C. Theodorou; G. Ch. Sirakoulis; S. Kim; P. Dimitrakis

doi:10.1016/j.sse.2024.109035

Effect of Al₂O₃ on the operation of SiN_X-based MIS RRAMs

A. E. Mavropoulis
, N. Vasileiadis
, P. Normand
, C. Theodorou
, G. Ch. Sirakoulis
, S. Kim
, P. Dimitrakis

Research output: Contribution to journal › Article › peer-review

Abstract

The role of a 3 nm Al₂O₃ layer on top of stoichiometric LPCVD SiN_x MIS RRAM cells is investigated by using various electrical characterization techniques. The conductive filament formation is explained, and a compact model is used to fit the current–voltage curves and find its evolution during each operation cycle. The conduction in SiN_x is also studied.

Original language	English
Article number	109035
Journal	Solid-State Electronics
Volume	223
DOIs	https://doi.org/10.1016/j.sse.2024.109035
State	Published - Jan 2025

Keywords

Aluminum Oxide
MIS
RRAM
ReRAM
Resistance switching
Silicon Nitride

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10.1016/j.sse.2024.109035

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@article{d108c70fc9e1466bab97bda824734215,

title = "Effect of Al2O3 on the operation of SiNX-based MIS RRAMs",

abstract = "The role of a 3 nm Al2O3 layer on top of stoichiometric LPCVD SiNx MIS RRAM cells is investigated by using various electrical characterization techniques. The conductive filament formation is explained, and a compact model is used to fit the current–voltage curves and find its evolution during each operation cycle. The conduction in SiNx is also studied.",

keywords = "Aluminum Oxide, MIS, RRAM, ReRAM, Resistance switching, Silicon Nitride",

author = "Mavropoulis, \{A. E.\} and N. Vasileiadis and P. Normand and C. Theodorou and \{Ch. Sirakoulis\}, G. and S. Kim and P. Dimitrakis",

note = "Publisher Copyright: {\textcopyright} 2024 Elsevier Ltd",

year = "2025",

month = jan,

doi = "10.1016/j.sse.2024.109035",

language = "English",

volume = "223",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Effect of Al2O3 on the operation of SiNX-based MIS RRAMs

AU - Mavropoulis, A. E.

AU - Vasileiadis, N.

AU - Normand, P.

AU - Theodorou, C.

AU - Ch. Sirakoulis, G.

AU - Kim, S.

AU - Dimitrakis, P.

PY - 2025/1

Y1 - 2025/1

N2 - The role of a 3 nm Al2O3 layer on top of stoichiometric LPCVD SiNx MIS RRAM cells is investigated by using various electrical characterization techniques. The conductive filament formation is explained, and a compact model is used to fit the current–voltage curves and find its evolution during each operation cycle. The conduction in SiNx is also studied.

AB - The role of a 3 nm Al2O3 layer on top of stoichiometric LPCVD SiNx MIS RRAM cells is investigated by using various electrical characterization techniques. The conductive filament formation is explained, and a compact model is used to fit the current–voltage curves and find its evolution during each operation cycle. The conduction in SiNx is also studied.

KW - Aluminum Oxide

KW - MIS

KW - RRAM

KW - ReRAM

KW - Resistance switching

KW - Silicon Nitride

UR - https://www.scopus.com/pages/publications/85210392715

U2 - 10.1016/j.sse.2024.109035

DO - 10.1016/j.sse.2024.109035

M3 - Article

AN - SCOPUS:85210392715

SN - 0038-1101

VL - 223

JO - Solid-State Electronics

JF - Solid-State Electronics

M1 - 109035

ER -

Effect of Al₂O₃ on the operation of SiN_X-based MIS RRAMs

Abstract

Keywords

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