Abstract
In this letter, the effects of negative and positive bias stability with respect to the anion composition of Zn-O-N thin-film transistors were researched. In the positive bias stress tests, the threshold voltage shift was high for ZnON devices with high nitrogen composition. In contrast to this, the negative bias stress test results have smaller Δ Vth values when nitrogen composition in ZnON was low. This different degradation behavior of ZnON for thin-film transistors was analyzed by using the subgap density of states which were obtained from monochromatic photonic capacitance-voltage measurement.
Original language | English |
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Article number | 9151205 |
Pages (from-to) | 1376-1379 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 41 |
Issue number | 9 |
DOIs | |
State | Published - Sep 2020 |
Keywords
- anion composition
- negative bias stress (NBS)
- positive bias stress (PBS)
- subgap density of states (DOS)
- Zinc Oxynitride (ZnON)