Effect of be doping on the properties of GaMnAs ferromagnetic semiconductors

S. Lee; S. J. Chung; I. S. Choi; Sh U. Yuldeshev; Hyunsik Im; T. W. Kang; W. L. Lim; Y. Sasaki; X. Liu; T. Wojtowicz; J. K. Furdyna

doi:10.1063/1.1556272

Effect of be doping on the properties of GaMnAs ferromagnetic semiconductors

S. Lee, S. J. Chung, I. S. Choi, Sh U. Yuldeshev, Hyunsik Im, T. W. Kang, W. L. Lim, Y. Sasaki, X. Liu, T. Wojtowicz, J. K. Furdyna

Division of System Semiconductor

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42 Scopus citations

Abstract

The effect of Be doping on the properties of GaMnAs ferromagnetic semiconductors was analyzed. The samples were characterized using SQUID and magnetotransport measurements. The observed increase in the critical temperature in Ga_1-xMn_xAs for the low range of x can be explained by the increase of free carrier concentrations in the system arising from Be doping.

Original language	English
Pages (from-to)	8307-8309
Number of pages	3
Journal	Journal of Applied Physics
Volume	93
Issue number	10 3
DOIs	https://doi.org/10.1063/1.1556272
State	Published - 15 May 2003

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abstract = "The effect of Be doping on the properties of GaMnAs ferromagnetic semiconductors was analyzed. The samples were characterized using SQUID and magnetotransport measurements. The observed increase in the critical temperature in Ga1-xMnxAs for the low range of x can be explained by the increase of free carrier concentrations in the system arising from Be doping.",

author = "S. Lee and Chung, {S. J.} and Choi, {I. S.} and Yuldeshev, {Sh U.} and Hyunsik Im and Kang, {T. W.} and Lim, {W. L.} and Y. Sasaki and X. Liu and T. Wojtowicz and Furdyna, {J. K.}",

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T1 - Effect of be doping on the properties of GaMnAs ferromagnetic semiconductors

AU - Lee, S.

AU - Chung, S. J.

AU - Choi, I. S.

AU - Yuldeshev, Sh U.

AU - Im, Hyunsik

AU - Kang, T. W.

AU - Lim, W. L.

AU - Sasaki, Y.

AU - Liu, X.

AU - Wojtowicz, T.

AU - Furdyna, J. K.

PY - 2003/5/15

Y1 - 2003/5/15

N2 - The effect of Be doping on the properties of GaMnAs ferromagnetic semiconductors was analyzed. The samples were characterized using SQUID and magnetotransport measurements. The observed increase in the critical temperature in Ga1-xMnxAs for the low range of x can be explained by the increase of free carrier concentrations in the system arising from Be doping.

AB - The effect of Be doping on the properties of GaMnAs ferromagnetic semiconductors was analyzed. The samples were characterized using SQUID and magnetotransport measurements. The observed increase in the critical temperature in Ga1-xMnxAs for the low range of x can be explained by the increase of free carrier concentrations in the system arising from Be doping.

UR - http://www.scopus.com/inward/record.url?scp=0038655514&partnerID=8YFLogxK

U2 - 10.1063/1.1556272

DO - 10.1063/1.1556272

M3 - Article

AN - SCOPUS:0038655514

SN - 0021-8979

VL - 93

SP - 8307

EP - 8309

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10 3

ER -

Effect of be doping on the properties of GaMnAs ferromagnetic semiconductors

Abstract

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