Effect of carrier gas on copper antimony sulfide thin films by spray pyrolytic approach

This study explores the ternary compound semiconductor as a potential absorber layer for third-generation solar cells. CuSbS₂, a promising candidate for thin film absorber layers, is fabricated using a simple spray pyrolysis method. The research specifically investigates the influence of two different carrier gases during the fabrication process. X-ray diffraction as well as Raman studies confirm that the films exhibit a chalcostibite structure. Notably, films fabricated with nitrogen as the carrier gas demonstrate enhanced crystallinity, accompanied by reduced microstrain and dislocation density. Furthermore, these films exhibit a significantly improved absorption coefficient, reaching 10⁵ cm^-1. Optical studies indicate that the materials possess a direct band gap of 1.50 eV and exhibit p-type conductivity. CuSbS₂ thin film heterojunction solar cell exhibits a maximum efficiency of 0.49%.