@inproceedings{31eaf337228d4ec1935ba959a43ec9a1,
title = "Effect of Cu insertion layer between top electrode and switching layer on resistive switching characteristics",
abstract = "By inserting copper (Cu) metal layer between platinum (Pt) and titanium dioxide (TiO 2), we have observed both unipolar and bipolar resistive switching characteristics in Pt/Cu/TiO 2/Pt stacked RRAM cell. In order to analyze the conduction mechanism, we have conducted I-V fitting. And based on measurement results of bias polarity dependency, we have found that copper plays a role as oxygen reservoir. It can explain redox mechanism in bipolar resistive switching cell.",
author = "Sunghun Jung and Oh, \{Jeong Hoon\} and Ryoo, \{Kyung Chang\} and Sungjun Kim and Lee, \{Jong Ho\} and Hyungcheol Shin and Park, \{Byung Gook\}",
year = "2012",
doi = "10.1109/SNW.2012.6243355",
language = "English",
isbn = "9781467309943",
series = "2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012",
booktitle = "2012 IEEE Silicon Nanoelectronics Workshop, SNW 2012",
note = "2012 17th IEEE Silicon Nanoelectronics Workshop, SNW 2012 ; Conference date: 10-06-2012 Through 11-06-2012",
}