Effect of deposition temperature on key optoelectronic properties of electrodeposited cuprous oxide thin films

C. Ravichandiran, A. Sakthivelu, R. Davidprabu, S. Valanarasu, A. Kathalingam, V. Ganesh, Mohd Shkir, C. J. Sreelatha, S. AlFaify

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

The cuprous oxide (Cu2O) thin films were electrodeposited with different reaction temperatures. The structural, morphological, optical, photoluminescence and photo response properties of the deposited films were analyzed. XRD analysis reveals cubic crystal structure for the deposited films with polycrystalline nature. The film deposited at room temperature possess high crystallite size of 37 nm. The surface morphology shows that by increasing the deposition temperature pyramid shaped morphology changes. Laser Raman study confirms the peaks 109, 148, 219, 415 and 635 cm−1 conforms the Cu2O phase formation. The band gap of the films are 2.02, 2.10 and 2.27 eV for the RT, 40 and 50 °C, respectively. The photoluminescence spectral analysis contains an emission peak at 618 nm confirm the formation of Cu2O. The photo response study confirms the ohmic nature of the films. The film electrodeposited at room temperature showed good I–V curve at the illumination of 300 W cm−2.

Original languageEnglish
Article number281
JournalOptical and Quantum Electronics
Volume50
Issue number7
DOIs
StatePublished - 1 Jul 2018

Keywords

  • 81.05.Dz
  • 81.40.Tv
  • 87.64.Bx
  • 87.64.kp
  • Optical
  • Photo response study
  • Photoluminescence
  • Raman spectroscopy
  • SEM/EDX
  • X-ray diffraction

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