Effect of direct current sputtering power on the behavior of amorphous indium-gallium-zinc-oxide thin-film transistors under negative bias illumination stress: A combination of experimental analyses and device simulation

Jun Tae Jang, Jozeph Park, Byung Du Ahn, Dong Myong Kim, Sung Jin Choi, Hyun Suk Kim, Dae Hwan Kim

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

The effect of direct current sputtering power of indium-gallium-zinc-oxide (IGZO) on the performance and stability of the corresponding thin-film transistor devices was studied. The field effect mobility increases as the IGZO sputter power increases, at the expense of device reliability under negative bias illumination stress (NBIS). Device simulation based on the extracted sub-gap density of states indicates that the field effect mobility is improved as a result of the number of acceptor-like states decreasing. The degradation by NBIS is suggested to be induced by the formation of peroxides in IGZO rather than charge trapping.

Original languageEnglish
Article number123505
JournalApplied Physics Letters
Volume106
Issue number12
DOIs
StatePublished - 23 Mar 2015

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