Abstract
The influence of electrical conduction properties of Cu-doped ZnO (ZnO:Cu) thin films on their magnetic behaviors was investigated. The electrical properties were controlled from n-type to p-type by changing Cu concentration (nCu), which was analyzed by Hall-effect measurements and X-ray photoelectron spectroscopy. The p-type samples with nCu<1 mol% were obviously ferromagnetic, whilst the n-type samples with n Cu≤0.75 mol% exhibited paramagnetism. By increasing nCu from 1 to 3 mol%, the ferromagnetic properties were observed to be degraded due to the existence of Cu and CuO2 anti-ferromagnetic clusters. These results suggest that hole carriers help to couple the ferromagnetic channels in ZnO:Cu.
Original language | English |
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Pages (from-to) | 4678-4681 |
Number of pages | 4 |
Journal | Physica B: Condensed Matter |
Volume | 405 |
Issue number | 22 |
DOIs | |
State | Published - 15 Nov 2010 |
Keywords
- Cu
- Doping type
- Ferromagnetism
- Hole carriers
- ZnO