Effect of electrical conduction properties on magnetic behaviors of Cu-doped ZnO thin films

Chang Oh Kim, Sung Kim, Hyoung Taek Oh, Suk Ho Choi, Yoon Shon, Sejoon Lee, Han Na Hwang, Chan Cuk Hwang

Research output: Contribution to journalArticlepeer-review

34 Scopus citations

Abstract

The influence of electrical conduction properties of Cu-doped ZnO (ZnO:Cu) thin films on their magnetic behaviors was investigated. The electrical properties were controlled from n-type to p-type by changing Cu concentration (nCu), which was analyzed by Hall-effect measurements and X-ray photoelectron spectroscopy. The p-type samples with nCu<1 mol% were obviously ferromagnetic, whilst the n-type samples with n Cu≤0.75 mol% exhibited paramagnetism. By increasing nCu from 1 to 3 mol%, the ferromagnetic properties were observed to be degraded due to the existence of Cu and CuO2 anti-ferromagnetic clusters. These results suggest that hole carriers help to couple the ferromagnetic channels in ZnO:Cu.

Original languageEnglish
Pages (from-to)4678-4681
Number of pages4
JournalPhysica B: Condensed Matter
Volume405
Issue number22
DOIs
StatePublished - 15 Nov 2010

Keywords

  • Cu
  • Doping type
  • Ferromagnetism
  • Hole carriers
  • ZnO

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