Effect of electrical conduction properties on magnetic behaviors of Cu-doped ZnO thin films

Chang Oh Kim; Sung Kim; Hyoung Taek Oh; Suk Ho Choi; Yoon Shon; Sejoon Lee; Han Na Hwang; Chan Cuk Hwang

doi:10.1016/j.physb.2010.08.061

Effect of electrical conduction properties on magnetic behaviors of Cu-doped ZnO thin films

Chang Oh Kim
, Sung Kim
, Hyoung Taek Oh
, Suk Ho Choi
, Yoon Shon
, Sejoon Lee
, Han Na Hwang
, Chan Cuk Hwang

Division of System Semiconductor

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

The influence of electrical conduction properties of Cu-doped ZnO (ZnO:Cu) thin films on their magnetic behaviors was investigated. The electrical properties were controlled from n-type to p-type by changing Cu concentration (n_Cu), which was analyzed by Hall-effect measurements and X-ray photoelectron spectroscopy. The p-type samples with n_Cu<1 mol% were obviously ferromagnetic, whilst the n-type samples with n _Cu≤0.75 mol% exhibited paramagnetism. By increasing n_Cu from 1 to 3 mol%, the ferromagnetic properties were observed to be degraded due to the existence of Cu and CuO₂ anti-ferromagnetic clusters. These results suggest that hole carriers help to couple the ferromagnetic channels in ZnO:Cu.

Original language	English
Pages (from-to)	4678-4681
Number of pages	4
Journal	Physica B: Condensed Matter
Volume	405
Issue number	22
DOIs	https://doi.org/10.1016/j.physb.2010.08.061
State	Published - 15 Nov 2010

Keywords

Cu
Doping type
Ferromagnetism
Hole carriers
ZnO

Access to Document

10.1016/j.physb.2010.08.061

Cite this

@article{a957eb5ab38b48048d525d6ed801f2f3,

title = "Effect of electrical conduction properties on magnetic behaviors of Cu-doped ZnO thin films",

abstract = "The influence of electrical conduction properties of Cu-doped ZnO (ZnO:Cu) thin films on their magnetic behaviors was investigated. The electrical properties were controlled from n-type to p-type by changing Cu concentration (nCu), which was analyzed by Hall-effect measurements and X-ray photoelectron spectroscopy. The p-type samples with nCu<1 mol\% were obviously ferromagnetic, whilst the n-type samples with n Cu≤0.75 mol\% exhibited paramagnetism. By increasing nCu from 1 to 3 mol\%, the ferromagnetic properties were observed to be degraded due to the existence of Cu and CuO2 anti-ferromagnetic clusters. These results suggest that hole carriers help to couple the ferromagnetic channels in ZnO:Cu.",

keywords = "Cu, Doping type, Ferromagnetism, Hole carriers, ZnO",

author = "Kim, \{Chang Oh\} and Sung Kim and Oh, \{Hyoung Taek\} and Choi, \{Suk Ho\} and Yoon Shon and Sejoon Lee and Hwang, \{Han Na\} and Hwang, \{Chan Cuk\}",

year = "2010",

month = nov,

day = "15",

doi = "10.1016/j.physb.2010.08.061",

language = "English",

volume = "405",

pages = "4678--4681",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

number = "22",

}

TY - JOUR

T1 - Effect of electrical conduction properties on magnetic behaviors of Cu-doped ZnO thin films

AU - Kim, Chang Oh

AU - Kim, Sung

AU - Oh, Hyoung Taek

AU - Choi, Suk Ho

AU - Shon, Yoon

AU - Lee, Sejoon

AU - Hwang, Han Na

AU - Hwang, Chan Cuk

PY - 2010/11/15

Y1 - 2010/11/15

N2 - The influence of electrical conduction properties of Cu-doped ZnO (ZnO:Cu) thin films on their magnetic behaviors was investigated. The electrical properties were controlled from n-type to p-type by changing Cu concentration (nCu), which was analyzed by Hall-effect measurements and X-ray photoelectron spectroscopy. The p-type samples with nCu<1 mol% were obviously ferromagnetic, whilst the n-type samples with n Cu≤0.75 mol% exhibited paramagnetism. By increasing nCu from 1 to 3 mol%, the ferromagnetic properties were observed to be degraded due to the existence of Cu and CuO2 anti-ferromagnetic clusters. These results suggest that hole carriers help to couple the ferromagnetic channels in ZnO:Cu.

AB - The influence of electrical conduction properties of Cu-doped ZnO (ZnO:Cu) thin films on their magnetic behaviors was investigated. The electrical properties were controlled from n-type to p-type by changing Cu concentration (nCu), which was analyzed by Hall-effect measurements and X-ray photoelectron spectroscopy. The p-type samples with nCu<1 mol% were obviously ferromagnetic, whilst the n-type samples with n Cu≤0.75 mol% exhibited paramagnetism. By increasing nCu from 1 to 3 mol%, the ferromagnetic properties were observed to be degraded due to the existence of Cu and CuO2 anti-ferromagnetic clusters. These results suggest that hole carriers help to couple the ferromagnetic channels in ZnO:Cu.

KW - Cu

KW - Doping type

KW - Ferromagnetism

KW - Hole carriers

KW - ZnO

UR - https://www.scopus.com/pages/publications/77957857569

U2 - 10.1016/j.physb.2010.08.061

DO - 10.1016/j.physb.2010.08.061

M3 - Article

AN - SCOPUS:77957857569

SN - 0921-4526

VL - 405

SP - 4678

EP - 4681

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 22

ER -

Effect of electrical conduction properties on magnetic behaviors of Cu-doped ZnO thin films

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this