Effect of Electronegativity on Bipolar Resistive Switching in a WO3-Based Asymmetric Capacitor Structure

Jongmin Kim, Akbar I. Inamdar, Yongcheol Jo, Hyeonseok Woo, Sangeun Cho, Sambhaji M. Pawar, Hyungsang Kim, Hyunsik Im

Research output: Contribution to journalArticlepeer-review

58 Scopus citations

Abstract

This study investigates the transport and switching time of nonvolatile tungsten oxide based resistive-switching (RS) memory devices. These devices consist of a highly resistive tungsten oxide film sandwiched between metal electrodes, and their RS characteristics are bipolar in the counterclockwise direction. The switching voltage, retention, endurance, and switching time are strongly dependent on the type of electrodes used, and we also find quantitative and qualitative evidence that the electronegativity (χ) of the electrodes plays a key role in determining the RS properties and switching time. We also propose an RS model based on the role of the electronegativity at the interface.

Original languageEnglish
Pages (from-to)9499-9505
Number of pages7
JournalACS Applied Materials and Interfaces
Volume8
Issue number14
DOIs
StatePublished - 27 Apr 2016

Keywords

  • electronegativity
  • oxygen ion migration
  • resistive switching
  • switching time
  • tungsten oxide

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