Abstract
This study investigates the transport and switching time of nonvolatile tungsten oxide based resistive-switching (RS) memory devices. These devices consist of a highly resistive tungsten oxide film sandwiched between metal electrodes, and their RS characteristics are bipolar in the counterclockwise direction. The switching voltage, retention, endurance, and switching time are strongly dependent on the type of electrodes used, and we also find quantitative and qualitative evidence that the electronegativity (χ) of the electrodes plays a key role in determining the RS properties and switching time. We also propose an RS model based on the role of the electronegativity at the interface.
Original language | English |
---|---|
Pages (from-to) | 9499-9505 |
Number of pages | 7 |
Journal | ACS Applied Materials and Interfaces |
Volume | 8 |
Issue number | 14 |
DOIs | |
State | Published - 27 Apr 2016 |
Keywords
- electronegativity
- oxygen ion migration
- resistive switching
- switching time
- tungsten oxide