Abstract
The effects of incoherent light illumination during electrochemical anodization on the surface and the optical properties of porous-Si layers were investigated. From microstructural analyses, the porosity values were observed to increase with increasing power of illuminating light. The porous-Si layers showed a red emission around 600-650 nm in the cathodoluminescence measurements. With increasing power of illuminating light, the emission intensity dramatically increased, and the peak position was slightly blue-shifted. It is thought that the improvement in the microstructural and the optical properties of porous-Si layers caused by incoherent light illumination during electrochemical anodization might be attributed to the promotion of chemical reactions and chemical dissolutions for the formation of porous Si.
| Original language | English |
|---|---|
| Pages (from-to) | 880-883 |
| Number of pages | 4 |
| Journal | Journal of the Korean Physical Society |
| Volume | 47 |
| Issue number | 5 |
| State | Published - Nov 2005 |
Keywords
- Electrochemical anodization
- Incoherent light assistance
- Porous silicon