Effect of inserted ultrathin barrier layer on luminescence of GaN/Al 0.5Ga0.5N multiple quantum wells

Young S. Park; Tae W. Kang; Yongmin Kim; Hyunsik Im

doi:10.1063/1.3226107

Effect of inserted ultrathin barrier layer on luminescence of GaN/Al _0.5Ga_0.5N multiple quantum wells

Young S. Park, Tae W. Kang, Yongmin Kim, Hyunsik Im

Division of System Semiconductor

Dongguk University

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We report that luminescence properties in GaN/Al_0.5Ga _0.5 N multiquantum wells (multi-QWs) are tailored by inserting an ultrathin Al_0.5Ga_0.5 N layer (∼5 Å) in the middle of QWs. The inserted layer causes a dramatic redshift in photoluminescence and cathodeluminescence because of a huge piezoelectric polarization due to the additional strain along the growth direction. Quantitative analysis on the effects of the ultrathin inserted layer on the luminescence properties is performed using self-consistent Schrödinger- Poisson band profile calculations.

Original language	English
Article number	101910
Journal	Applied Physics Letters
Volume	95
Issue number	10
DOIs	https://doi.org/10.1063/1.3226107
State	Published - 2009

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@article{b70e2c1a87c5407d9de9e35488c3036a,

title = "Effect of inserted ultrathin barrier layer on luminescence of GaN/Al 0.5Ga0.5N multiple quantum wells",

abstract = "We report that luminescence properties in GaN/Al0.5Ga 0.5 N multiquantum wells (multi-QWs) are tailored by inserting an ultrathin Al0.5Ga0.5 N layer (∼5 {\AA}) in the middle of QWs. The inserted layer causes a dramatic redshift in photoluminescence and cathodeluminescence because of a huge piezoelectric polarization due to the additional strain along the growth direction. Quantitative analysis on the effects of the ultrathin inserted layer on the luminescence properties is performed using self-consistent Schr{\"o}dinger- Poisson band profile calculations.",

author = "Park, {Young S.} and Kang, {Tae W.} and Yongmin Kim and Hyunsik Im",

year = "2009",

doi = "10.1063/1.3226107",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Effect of inserted ultrathin barrier layer on luminescence of GaN/Al 0.5Ga0.5N multiple quantum wells

AU - Park, Young S.

AU - Kang, Tae W.

AU - Kim, Yongmin

AU - Im, Hyunsik

PY - 2009

Y1 - 2009

N2 - We report that luminescence properties in GaN/Al0.5Ga 0.5 N multiquantum wells (multi-QWs) are tailored by inserting an ultrathin Al0.5Ga0.5 N layer (∼5 Å) in the middle of QWs. The inserted layer causes a dramatic redshift in photoluminescence and cathodeluminescence because of a huge piezoelectric polarization due to the additional strain along the growth direction. Quantitative analysis on the effects of the ultrathin inserted layer on the luminescence properties is performed using self-consistent Schrödinger- Poisson band profile calculations.

AB - We report that luminescence properties in GaN/Al0.5Ga 0.5 N multiquantum wells (multi-QWs) are tailored by inserting an ultrathin Al0.5Ga0.5 N layer (∼5 Å) in the middle of QWs. The inserted layer causes a dramatic redshift in photoluminescence and cathodeluminescence because of a huge piezoelectric polarization due to the additional strain along the growth direction. Quantitative analysis on the effects of the ultrathin inserted layer on the luminescence properties is performed using self-consistent Schrödinger- Poisson band profile calculations.

UR - http://www.scopus.com/inward/record.url?scp=70249105717&partnerID=8YFLogxK

U2 - 10.1063/1.3226107

DO - 10.1063/1.3226107

M3 - Article

AN - SCOPUS:70249105717

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

M1 - 101910

ER -

Effect of inserted ultrathin barrier layer on luminescence of GaN/Al _0.5Ga_0.5N multiple quantum wells

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