TY - JOUR
T1 - Effect of interlayer exchange coupling on the curie temperature in Ga 1-xMnxAs trilayer structures
AU - Yuldashev, Shavkat U.
AU - Kim, Yongmin
AU - Kim, Nayoung
AU - Im, H.
AU - Kang, Tae Won
AU - Lee, Sanghoon
AU - Sasaki, Yuji
AU - Liu, Xin
AU - Furdyna, Jacek K.
PY - 2004/4
Y1 - 2004/4
N2 - We have investigated the effect of interlayer exchange coupling on the Curie temperature of ferromagnetic (FM) layers in Gai1-xMn xAs(Be)/GaAs/Ga1-xMnxAs trilayer structures. The FM layers in the trilayers contained the same concentration of Mn (x ≈0.046), but the top ferromagnetic layer was additionally doped with Be. For this x the Curie temperature observed on a control single-layer sample of Be-doped Ga0.954Mn0.046 As is lower than that of an undoped sample. However, in the case of trilayers, we observed that the Curie temperature of the Gao0.954Mn0.046AS(Be) layer increased with decreasing thickness of the GaAs spacer separating the two FM layers. This increase in Curie temperature is due to the exchange coupling between the ferromagnetic layers mediated by the spin-polarized free carriers (holes) through the thin insulating spacer.
AB - We have investigated the effect of interlayer exchange coupling on the Curie temperature of ferromagnetic (FM) layers in Gai1-xMn xAs(Be)/GaAs/Ga1-xMnxAs trilayer structures. The FM layers in the trilayers contained the same concentration of Mn (x ≈0.046), but the top ferromagnetic layer was additionally doped with Be. For this x the Curie temperature observed on a control single-layer sample of Be-doped Ga0.954Mn0.046 As is lower than that of an undoped sample. However, in the case of trilayers, we observed that the Curie temperature of the Gao0.954Mn0.046AS(Be) layer increased with decreasing thickness of the GaAs spacer separating the two FM layers. This increase in Curie temperature is due to the exchange coupling between the ferromagnetic layers mediated by the spin-polarized free carriers (holes) through the thin insulating spacer.
KW - Exchange coupling
KW - Magnetic semiconductors
KW - Magnetjc trilayer structures
UR - http://www.scopus.com/inward/record.url?scp=3142730753&partnerID=8YFLogxK
U2 - 10.1143/JJAP.43.2093
DO - 10.1143/JJAP.43.2093
M3 - Article
AN - SCOPUS:3142730753
SN - 0021-4922
VL - 43
SP - 2093
EP - 2096
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
IS - 4 B
ER -