Abstract
In this work, we study TiN/SiOx/ITO devices to implement conductance quantization and multilevel conductance for high-density memory applications. We observed stepwise conductance with integer and half-integer multiples under pulse and DC voltages. We predict this device's conductance quantization to be a combined result of the formation and rupture of oxygen vacancies in SiOx film and the formation of O2−rich ITO layers due to the oxidation reaction between ITO and SiOx. Furthermore, it was found that TiN/SiOx/ITO RRAM devices could stably endure each conductance level.
Original language | English |
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Pages (from-to) | 425-430 |
Number of pages | 6 |
Journal | Ceramics International |
Volume | 49 |
Issue number | 1 |
DOIs | |
State | Published - 1 Jan 2023 |
Keywords
- Conductance quantization
- High-density memory
- ITO electrode
- Multilevel conductance