Effect of ITO electrode on conductance quantization and multi-level cells in TiN/SiOx/ITO devices

Beomki Jeon, Sungjun Kim

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

In this work, we study TiN/SiOx/ITO devices to implement conductance quantization and multilevel conductance for high-density memory applications. We observed stepwise conductance with integer and half-integer multiples under pulse and DC voltages. We predict this device's conductance quantization to be a combined result of the formation and rupture of oxygen vacancies in SiOx film and the formation of O2rich ITO layers due to the oxidation reaction between ITO and SiOx. Furthermore, it was found that TiN/SiOx/ITO RRAM devices could stably endure each conductance level.

Original languageEnglish
Pages (from-to)425-430
Number of pages6
JournalCeramics International
Volume49
Issue number1
DOIs
StatePublished - 1 Jan 2023

Keywords

  • Conductance quantization
  • High-density memory
  • ITO electrode
  • Multilevel conductance

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