Effect of ITO electrode on conductance quantization and multi-level cells in TiN/SiOx/ITO devices

Beomki Jeon; Sungjun Kim

doi:10.1016/j.ceramint.2022.09.007

Effect of ITO electrode on conductance quantization and multi-level cells in TiN/SiOx/ITO devices

Beomki Jeon
, Sungjun Kim

Department of Electronics & Electrical Engineering

Dongguk University

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

In this work, we study TiN/SiO_x/ITO devices to implement conductance quantization and multilevel conductance for high-density memory applications. We observed stepwise conductance with integer and half-integer multiples under pulse and DC voltages. We predict this device's conductance quantization to be a combined result of the formation and rupture of oxygen vacancies in SiO_x film and the formation of O₂⁻rich ITO layers due to the oxidation reaction between ITO and SiO_x. Furthermore, it was found that TiN/SiO_x/ITO RRAM devices could stably endure each conductance level.

Original language	English
Pages (from-to)	425-430
Number of pages	6
Journal	Ceramics International
Volume	49
Issue number	1
DOIs	https://doi.org/10.1016/j.ceramint.2022.09.007
State	Published - 1 Jan 2023

Keywords

Conductance quantization
High-density memory
ITO electrode
Multilevel conductance

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10.1016/j.ceramint.2022.09.007

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title = "Effect of ITO electrode on conductance quantization and multi-level cells in TiN/SiOx/ITO devices",

abstract = "In this work, we study TiN/SiOx/ITO devices to implement conductance quantization and multilevel conductance for high-density memory applications. We observed stepwise conductance with integer and half-integer multiples under pulse and DC voltages. We predict this device's conductance quantization to be a combined result of the formation and rupture of oxygen vacancies in SiOx film and the formation of O2−rich ITO layers due to the oxidation reaction between ITO and SiOx. Furthermore, it was found that TiN/SiOx/ITO RRAM devices could stably endure each conductance level.",

keywords = "Conductance quantization, High-density memory, ITO electrode, Multilevel conductance",

author = "Beomki Jeon and Sungjun Kim",

note = "Publisher Copyright: {\textcopyright} 2022 Elsevier Ltd and Techna Group S.r.l.",

year = "2023",

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T1 - Effect of ITO electrode on conductance quantization and multi-level cells in TiN/SiOx/ITO devices

AU - Jeon, Beomki

AU - Kim, Sungjun

PY - 2023/1/1

Y1 - 2023/1/1

N2 - In this work, we study TiN/SiOx/ITO devices to implement conductance quantization and multilevel conductance for high-density memory applications. We observed stepwise conductance with integer and half-integer multiples under pulse and DC voltages. We predict this device's conductance quantization to be a combined result of the formation and rupture of oxygen vacancies in SiOx film and the formation of O2−rich ITO layers due to the oxidation reaction between ITO and SiOx. Furthermore, it was found that TiN/SiOx/ITO RRAM devices could stably endure each conductance level.

AB - In this work, we study TiN/SiOx/ITO devices to implement conductance quantization and multilevel conductance for high-density memory applications. We observed stepwise conductance with integer and half-integer multiples under pulse and DC voltages. We predict this device's conductance quantization to be a combined result of the formation and rupture of oxygen vacancies in SiOx film and the formation of O2−rich ITO layers due to the oxidation reaction between ITO and SiOx. Furthermore, it was found that TiN/SiOx/ITO RRAM devices could stably endure each conductance level.

KW - Conductance quantization

KW - High-density memory

KW - ITO electrode

KW - Multilevel conductance

UR - https://www.scopus.com/pages/publications/85137642018

U2 - 10.1016/j.ceramint.2022.09.007

DO - 10.1016/j.ceramint.2022.09.007

M3 - Article

AN - SCOPUS:85137642018

SN - 0272-8842

VL - 49

SP - 425

EP - 430

JO - Ceramics International

JF - Ceramics International

IS - 1

ER -

Effect of ITO electrode on conductance quantization and multi-level cells in TiN/SiOx/ITO devices

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Keywords

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