Effect of metallic composition on electrical properties of solution-processed indium-gallium-zinc-oxide thin-film transistors

Yong Hoon Kim; Min Koo Han; Jeong In Han; Sung Kyu Park

doi:10.1109/TED.2010.2043179

Effect of metallic composition on electrical properties of solution-processed indium-gallium-zinc-oxide thin-film transistors

Yong Hoon Kim
, Min Koo Han
, Jeong In Han
, Sung Kyu Park

Department of Chemical and Biochemical Engineering

Research output: Contribution to journal › Article › peer-review

81 Scopus citations

Abstract

We report the combinatorial study on surface morphology and electrical properties of solution-processed amorphous indium-gallium-zinc-oxide (α-IGZO) thin-film transistors (TFTs). The sol-gel-processed α-IGZO thin films typically have shown an amorphous structure and critical dependence of mobility, carrier concentration, and surface roughness on the In, Ga, and Zn molar ratio in the solution phase. Based on efficient control of the metallic components from the sol-gel process, the solution-processed α-IGZO TFTs with a mobility of 0.5-2 cm²/V·s, on/off current ratio > 10⁷, and a subthreshold slope of as steep as 1.5 V/dec were obtained.

Original language	English
Article number	10
Pages (from-to)	1009-1014
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	57
Issue number	5
DOIs	https://doi.org/10.1109/TED.2010.2043179
State	Published - May 2010

Keywords

α-IGZO
Metallic composition
Solution-process
Thin-film transistor

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10.1109/TED.2010.2043179

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title = "Effect of metallic composition on electrical properties of solution-processed indium-gallium-zinc-oxide thin-film transistors",

abstract = "We report the combinatorial study on surface morphology and electrical properties of solution-processed amorphous indium-gallium-zinc-oxide (α-IGZO) thin-film transistors (TFTs). The sol-gel-processed α-IGZO thin films typically have shown an amorphous structure and critical dependence of mobility, carrier concentration, and surface roughness on the In, Ga, and Zn molar ratio in the solution phase. Based on efficient control of the metallic components from the sol-gel process, the solution-processed α-IGZO TFTs with a mobility of 0.5-2 cm2/V·s, on/off current ratio > 107, and a subthreshold slope of as steep as 1.5 V/dec were obtained.",

keywords = "α-IGZO, Metallic composition, Solution-process, Thin-film transistor",

author = "Kim, \{Yong Hoon\} and Han, \{Min Koo\} and Han, \{Jeong In\} and Park, \{Sung Kyu\}",

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T1 - Effect of metallic composition on electrical properties of solution-processed indium-gallium-zinc-oxide thin-film transistors

AU - Kim, Yong Hoon

AU - Han, Min Koo

AU - Han, Jeong In

AU - Park, Sung Kyu

PY - 2010/5

Y1 - 2010/5

N2 - We report the combinatorial study on surface morphology and electrical properties of solution-processed amorphous indium-gallium-zinc-oxide (α-IGZO) thin-film transistors (TFTs). The sol-gel-processed α-IGZO thin films typically have shown an amorphous structure and critical dependence of mobility, carrier concentration, and surface roughness on the In, Ga, and Zn molar ratio in the solution phase. Based on efficient control of the metallic components from the sol-gel process, the solution-processed α-IGZO TFTs with a mobility of 0.5-2 cm2/V·s, on/off current ratio > 107, and a subthreshold slope of as steep as 1.5 V/dec were obtained.

AB - We report the combinatorial study on surface morphology and electrical properties of solution-processed amorphous indium-gallium-zinc-oxide (α-IGZO) thin-film transistors (TFTs). The sol-gel-processed α-IGZO thin films typically have shown an amorphous structure and critical dependence of mobility, carrier concentration, and surface roughness on the In, Ga, and Zn molar ratio in the solution phase. Based on efficient control of the metallic components from the sol-gel process, the solution-processed α-IGZO TFTs with a mobility of 0.5-2 cm2/V·s, on/off current ratio > 107, and a subthreshold slope of as steep as 1.5 V/dec were obtained.

KW - α-IGZO

KW - Metallic composition

KW - Solution-process

KW - Thin-film transistor

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M3 - Article

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JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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Effect of metallic composition on electrical properties of solution-processed indium-gallium-zinc-oxide thin-film transistors

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Keywords

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