Effect of Non-stoichiometry and oxygen deficiency in In2O3 thin films on gas sensing performance

Sarita Patil; Vithoba Patil; Sambhaji Shendage; Jin Kim; Deepak Patil; Pramod Patil

doi:10.1016/j.matlet.2021.131091

Effect of Non-stoichiometry and oxygen deficiency in In₂O₃ thin films on gas sensing performance

Sarita Patil
, Vithoba Patil
, Sambhaji Shendage
, Jin Kim
, Deepak Patil
, Pramod Patil

Department of Physics

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

The non-stoichiometric and oxygen deficiencies in Indium oxide (In₂O₃) are the key properties which help to improve the gas sensitivity of the In₂O₃. In₂O₃ thin films were deposited using simple spin coating method with varying precursor solution concentration. The variation of solution concentration has revealed the systematic growth of leaflet like structure. The In₂O₃ thin films coated at solution concentration of 0.15 M showed maximum sensor response of ∼ 25.27 at optimum temperature of 200 °C against NO₂ gas for 100 ppm concentration. The highest performance of In₂O₃ gas sensor can be attributed to the defects present in In₂O₃ as confirmed by PL spectra.

Original language	English
Article number	131091
Journal	Materials Letters
Volume	307
DOIs	https://doi.org/10.1016/j.matlet.2021.131091
State	Published - 15 Jan 2022

Keywords

Gas Sensing
Hydrothermal
InO films
NO gas

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10.1016/j.matlet.2021.131091

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title = "Effect of Non-stoichiometry and oxygen deficiency in In2O3 thin films on gas sensing performance",

abstract = "The non-stoichiometric and oxygen deficiencies in Indium oxide (In2O3) are the key properties which help to improve the gas sensitivity of the In2O3. In2O3 thin films were deposited using simple spin coating method with varying precursor solution concentration. The variation of solution concentration has revealed the systematic growth of leaflet like structure. The In2O3 thin films coated at solution concentration of 0.15 M showed maximum sensor response of ∼ 25.27 at optimum temperature of 200 °C against NO2 gas for 100 ppm concentration. The highest performance of In2O3 gas sensor can be attributed to the defects present in In2O3 as confirmed by PL spectra.",

keywords = "Gas Sensing, Hydrothermal, InO films, NO gas",

author = "Sarita Patil and Vithoba Patil and Sambhaji Shendage and Jin Kim and Deepak Patil and Pramod Patil",

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doi = "10.1016/j.matlet.2021.131091",

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T1 - Effect of Non-stoichiometry and oxygen deficiency in In2O3 thin films on gas sensing performance

AU - Patil, Sarita

AU - Patil, Vithoba

AU - Shendage, Sambhaji

AU - Kim, Jin

AU - Patil, Deepak

AU - Patil, Pramod

PY - 2022/1/15

Y1 - 2022/1/15

N2 - The non-stoichiometric and oxygen deficiencies in Indium oxide (In2O3) are the key properties which help to improve the gas sensitivity of the In2O3. In2O3 thin films were deposited using simple spin coating method with varying precursor solution concentration. The variation of solution concentration has revealed the systematic growth of leaflet like structure. The In2O3 thin films coated at solution concentration of 0.15 M showed maximum sensor response of ∼ 25.27 at optimum temperature of 200 °C against NO2 gas for 100 ppm concentration. The highest performance of In2O3 gas sensor can be attributed to the defects present in In2O3 as confirmed by PL spectra.

AB - The non-stoichiometric and oxygen deficiencies in Indium oxide (In2O3) are the key properties which help to improve the gas sensitivity of the In2O3. In2O3 thin films were deposited using simple spin coating method with varying precursor solution concentration. The variation of solution concentration has revealed the systematic growth of leaflet like structure. The In2O3 thin films coated at solution concentration of 0.15 M showed maximum sensor response of ∼ 25.27 at optimum temperature of 200 °C against NO2 gas for 100 ppm concentration. The highest performance of In2O3 gas sensor can be attributed to the defects present in In2O3 as confirmed by PL spectra.

KW - Gas Sensing

KW - Hydrothermal

KW - InO films

KW - NO gas

UR - https://www.scopus.com/pages/publications/85117366483

U2 - 10.1016/j.matlet.2021.131091

DO - 10.1016/j.matlet.2021.131091

M3 - Article

AN - SCOPUS:85117366483

SN - 0167-577X

VL - 307

JO - Materials Letters

JF - Materials Letters

M1 - 131091

ER -

Effect of Non-stoichiometry and oxygen deficiency in In₂O₃ thin films on gas sensing performance

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Keywords

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