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Effect of precursor concentration and bath temperature on the growth of chemical bath deposited tin sulphide thin films

  • Sri Venkateswara University

Research output: Contribution to journal › Article › peer-review

63 Scopus citations

Abstract

SnS is a promising candidate for a low-cost, non-toxic solar cell absorber layer. Tin sulphide thin films have been deposited by chemical bath deposition technique from a solution containing stannous chloride, thioacetamide, ammonia and triethanolamine (TEA). The effects of concentration of tin salt, triethanolamine and bath temperature on the growth of tin sulphide films have been investigated in order to optimize the growth conditions to obtain tin monosulphide (SnS) films. SnS films obtained under optimized conditions were found to be polycrystalline in nature with orthorhombic structure. The optical band gap of these films was found to be 1.5 eV.

Original languageEnglish
Pages (from-to)2732-2740
Number of pages9
JournalApplied Surface Science
Volume258
Issue number7
DOIs
StatePublished - 15 Jan 2012

Keywords

  • Band gap
  • Chemical bath deposition
  • SnS
  • Solar cell absorber
  • Triethanolamine
  • XRD

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