Effect of Si Growth Temperature on Fabrication of Si-ZnO Coaxial Nanorod Heterostructure on (100) Si Substrate

Im Taek Yoon, Hak Dong Cho, Hoon Young Cho, Dong Wook Kwak, Sejoon Lee

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The realization and application of optoelectronics, photonics, and sensing, such as in solar diode sensors and photodiodes, which are potentially useful from ultraviolet to infrared light sensing, is dramatically advanced when ZnO is integrated into semiconductor nanostructures, especially when compatible with mature silicon technology. Here, we compare and analyze the fundamental features of the Si-ZnO coaxial nanorod heterostructures (Si@ZnO NRs) grown on semi-insulating (100)-oriented Si substrates at growing temperatures of 500°C, 600°C, 650°C, and 700°C of the Si layer for device applications. ZnO NRs were grown by a vapor phase transport, and Si layers were made by rapid thermal chemical vapor deposition. X-ray diffraction, field emission scanning electron microscopy (FESEM), energy-dispersive x-ray spectroscopy, and Raman experiments showed that ZnO NRs were single crystals with a würtzite structure, while the Si layer was polysilicon with a zincblende structure. Furthermore, FESEM revealed that Si shell thickness of the Si@ZnO NRs increases with increasing growing temperatures of Si from 500°C to 700°C.

Original languageEnglish
Pages (from-to)4119-4125
Number of pages7
JournalJournal of Electronic Materials
Volume46
Issue number7
DOIs
StatePublished - 1 Jul 2017

Keywords

  • chemical vapor deposition
  • Coaxial nanorod heterostructures
  • Si layer
  • ZnO nanorod

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