TY - JOUR
T1 - Effect of Si Growth Temperature on Fabrication of Si-ZnO Coaxial Nanorod Heterostructure on (100) Si Substrate
AU - Yoon, Im Taek
AU - Cho, Hak Dong
AU - Cho, Hoon Young
AU - Kwak, Dong Wook
AU - Lee, Sejoon
N1 - Publisher Copyright:
© 2017, The Minerals, Metals & Materials Society.
PY - 2017/7/1
Y1 - 2017/7/1
N2 - The realization and application of optoelectronics, photonics, and sensing, such as in solar diode sensors and photodiodes, which are potentially useful from ultraviolet to infrared light sensing, is dramatically advanced when ZnO is integrated into semiconductor nanostructures, especially when compatible with mature silicon technology. Here, we compare and analyze the fundamental features of the Si-ZnO coaxial nanorod heterostructures (Si@ZnO NRs) grown on semi-insulating (100)-oriented Si substrates at growing temperatures of 500°C, 600°C, 650°C, and 700°C of the Si layer for device applications. ZnO NRs were grown by a vapor phase transport, and Si layers were made by rapid thermal chemical vapor deposition. X-ray diffraction, field emission scanning electron microscopy (FESEM), energy-dispersive x-ray spectroscopy, and Raman experiments showed that ZnO NRs were single crystals with a würtzite structure, while the Si layer was polysilicon with a zincblende structure. Furthermore, FESEM revealed that Si shell thickness of the Si@ZnO NRs increases with increasing growing temperatures of Si from 500°C to 700°C.
AB - The realization and application of optoelectronics, photonics, and sensing, such as in solar diode sensors and photodiodes, which are potentially useful from ultraviolet to infrared light sensing, is dramatically advanced when ZnO is integrated into semiconductor nanostructures, especially when compatible with mature silicon technology. Here, we compare and analyze the fundamental features of the Si-ZnO coaxial nanorod heterostructures (Si@ZnO NRs) grown on semi-insulating (100)-oriented Si substrates at growing temperatures of 500°C, 600°C, 650°C, and 700°C of the Si layer for device applications. ZnO NRs were grown by a vapor phase transport, and Si layers were made by rapid thermal chemical vapor deposition. X-ray diffraction, field emission scanning electron microscopy (FESEM), energy-dispersive x-ray spectroscopy, and Raman experiments showed that ZnO NRs were single crystals with a würtzite structure, while the Si layer was polysilicon with a zincblende structure. Furthermore, FESEM revealed that Si shell thickness of the Si@ZnO NRs increases with increasing growing temperatures of Si from 500°C to 700°C.
KW - chemical vapor deposition
KW - Coaxial nanorod heterostructures
KW - Si layer
KW - ZnO nanorod
UR - http://www.scopus.com/inward/record.url?scp=85012916363&partnerID=8YFLogxK
U2 - 10.1007/s11664-017-5317-z
DO - 10.1007/s11664-017-5317-z
M3 - Article
AN - SCOPUS:85012916363
SN - 0361-5235
VL - 46
SP - 4119
EP - 4125
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
IS - 7
ER -