Effect of sputtering working pressure on the optical and electrical properties of inzno thin-film transistors

Ji Min Park, Hyoung Do Kim, Seong Cheol Jang, Hyun Suk Kim

Research output: Contribution to journalArticlepeer-review

Abstract

Amorphous In-Ga-Zn-O (a-IGZO) thin film transistors, because of their relatively low mobility, have limits in attempts to fulfill high-end specifications for display backplanes. In-Zn-O (IZO) is a promising semiconductor material for high mobility device applications with excellent transparency to visible light region and low temperature process capability. In this paper, the effects of working pressure on the physical and electrical properties of IZO films and thin film transistors are investigated. The working pressure is modulated from 2 mTorr to 5 mTorr, whereas the other process conditions are fixed. As the working pressure increases, the extracted optical band gap of IZO films gradually decreases. Absorption coefficient spectra indicate that subgap states increase at high working pressure. Furthermore, IZO film fabricated at low working pressure shows smoother surface morphology. As a result, IZO thin film transistors with optimum conditions exhibit excellent switching characteristics with high mobility (≥ 30cm2/Vs) and large on/off ratio.

Original languageEnglish
Pages (from-to)211-216
Number of pages6
JournalKorean Journal of Materials Research
Volume30
Issue number4
DOIs
StatePublished - 1 Apr 2020

Keywords

  • Amorphous oxide semiconductor
  • High mobility
  • InZnO
  • Magnetron sputtering
  • Thin film transistors

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