TY - JOUR
T1 - Effect of sulfur concentration on the properties of tin disulfide thin films by nebulizer spray pyrolysis technique
AU - Arulanantham, A. M.S.
AU - Valanarasu, S.
AU - Jeyadheepan, K.
AU - Kathalingam, A.
AU - Kulandaisamy, I.
N1 - Publisher Copyright:
© 2017, Springer Science+Business Media, LLC.
PY - 2017/12/1
Y1 - 2017/12/1
N2 - Influence of sulfur concentration variation on the physical and chemical properties of nebulizer spray pyrolysis deposited SnS2 thin films are investigated. The SnS2 thin films were coated onto glass substrate at 325 °C by changing sulfur concentration as 0.8, 0.9 and 1.0 M. Sulfur concentration dependent micro-structural, surface morphological, optical and electrical characteristics of the films were studied using X-ray diffraction, Raman analysis, scanning electron microscope, atomic force microscope, UV–Vis spectroscopy, photoluminescence spectroscopy and Hall Effect measurement, respectively. X-ray diffraction measurements demonstrated the growth of crystalline SnS2 films of hexagonal structure with preferred orientation along (002) plane. Scanning electron microscopic study revealed needle shape and basket knitting shape morphology of deposited films. The films showed direct band gap ranging from 2.02 to 2.18 eV depending on sulfur concentration. Hall measurement revealed the conductivity and mobility ranging from 10−3 to 10−2 (1/Ω-cm) and 1.4 × 102 to 3.01 × 102 (cm2/V s) respectively.
AB - Influence of sulfur concentration variation on the physical and chemical properties of nebulizer spray pyrolysis deposited SnS2 thin films are investigated. The SnS2 thin films were coated onto glass substrate at 325 °C by changing sulfur concentration as 0.8, 0.9 and 1.0 M. Sulfur concentration dependent micro-structural, surface morphological, optical and electrical characteristics of the films were studied using X-ray diffraction, Raman analysis, scanning electron microscope, atomic force microscope, UV–Vis spectroscopy, photoluminescence spectroscopy and Hall Effect measurement, respectively. X-ray diffraction measurements demonstrated the growth of crystalline SnS2 films of hexagonal structure with preferred orientation along (002) plane. Scanning electron microscopic study revealed needle shape and basket knitting shape morphology of deposited films. The films showed direct band gap ranging from 2.02 to 2.18 eV depending on sulfur concentration. Hall measurement revealed the conductivity and mobility ranging from 10−3 to 10−2 (1/Ω-cm) and 1.4 × 102 to 3.01 × 102 (cm2/V s) respectively.
UR - http://www.scopus.com/inward/record.url?scp=85028960717&partnerID=8YFLogxK
U2 - 10.1007/s10854-017-7817-2
DO - 10.1007/s10854-017-7817-2
M3 - Article
AN - SCOPUS:85028960717
SN - 0957-4522
VL - 28
SP - 18675
EP - 18685
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 24
ER -