Effect of thermal treatment on the optical and the structural properties of In0.5Ga0.5As quantum dots

Jae Cheol Shin, Won Jun Choi, Jeong Woo Choe

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The optical and the structural properties of a 3-stacked In0.5Ga0.5As quantum dot (QD)/GaAs structure subjected to a post thermal annealing process have been investigated. Photoluminescence (PL) and time-resolved PL spectroscopy have been performed to examine the optical properties of the as-grown and thermally-treated QD structures. Thermal annealing of the QD structure at temperatures up to 700 °C leads to enhancements of the PL intensity and the carrier decay time without any PL peak shifts. The increases in the PL intensity and the carrier lifetime can be attributed to a reduction in the number of crystal defects in the QDs and in the GaAs layer near the QDs. The structural properties of the In0.5Ga0.5As QDs/GaAs heterointerface have been further examined with a transmission electron microscope analysis.

Original languageEnglish
Pages (from-to)1375-1379
Number of pages5
JournalJournal of the Korean Physical Society
Volume64
Issue number9
DOIs
StatePublished - May 2014

Keywords

  • III-V semiconductor
  • InGaAs
  • MBE
  • Photoluminescence
  • Quantum dot

Fingerprint

Dive into the research topics of 'Effect of thermal treatment on the optical and the structural properties of In0.5Ga0.5As quantum dots'. Together they form a unique fingerprint.

Cite this