TY - JOUR
T1 - Effect of vacuum metalized gate electrode in top-gate solid-state electrolyte-gated organic transistors
AU - Nketia-Yawson, Benjamin
AU - Tabi, Grace Dansoa
AU - Xu, Yong
AU - Noh, Yong Young
N1 - Publisher Copyright:
© 2018 Elsevier B.V.
PY - 2018/4
Y1 - 2018/4
N2 - We report the effect of the metal-gate electrode in top-gate solid-state electrolyte-gated transistors (SEGTs). Here, a P(VDF-TrFE):P(VDF-HFP)-[EMIM][TFSI] dielectric blend is used as the solid-state electrolyte gate insulator (SEGI), with a variety of metal-gate electrodes, such as gold (Au), nickel (Ni), silver (Ag), and copper (Cu), and poly(3-hexylthiophene-2,5-diyl) (P3HT) as a semiconductor. Among the employed metal-gate electrodes, we achieved highest hole mobility of 3.26 ± 0.67 cm2V−1s−1 in Au-gated P3HT SEGTs, which is ten times greater than the other metal-gated devices. The remarkable mobility in Au-gated devices is attributed to low contact resistance (Rc < 2 kΩ cm) and the exceptional electrochemical stability of the gold electrode. X-ray photoelectron spectroscopy (XPS) analysis reveals the formation of the oxide layers (NiO, Ni2O3, Cu2O, AgxO) at the thermally-evaporated thin metal/SEGI interface. In a metal-insulator-semiconductor capacitor, the highly-conductive Ag and Cu based capacitors measured higher specific capacitance above 30 μFcm−2 compared to Au and Ni capacitors (∼10 μFcm−2) based on the same SEGI composition. Our findings provide useful insight for enhancing the charge injection and transport properties in top-gated electrolyte-gated transistors by selecting the appropriate top-gate metal electrode.
AB - We report the effect of the metal-gate electrode in top-gate solid-state electrolyte-gated transistors (SEGTs). Here, a P(VDF-TrFE):P(VDF-HFP)-[EMIM][TFSI] dielectric blend is used as the solid-state electrolyte gate insulator (SEGI), with a variety of metal-gate electrodes, such as gold (Au), nickel (Ni), silver (Ag), and copper (Cu), and poly(3-hexylthiophene-2,5-diyl) (P3HT) as a semiconductor. Among the employed metal-gate electrodes, we achieved highest hole mobility of 3.26 ± 0.67 cm2V−1s−1 in Au-gated P3HT SEGTs, which is ten times greater than the other metal-gated devices. The remarkable mobility in Au-gated devices is attributed to low contact resistance (Rc < 2 kΩ cm) and the exceptional electrochemical stability of the gold electrode. X-ray photoelectron spectroscopy (XPS) analysis reveals the formation of the oxide layers (NiO, Ni2O3, Cu2O, AgxO) at the thermally-evaporated thin metal/SEGI interface. In a metal-insulator-semiconductor capacitor, the highly-conductive Ag and Cu based capacitors measured higher specific capacitance above 30 μFcm−2 compared to Au and Ni capacitors (∼10 μFcm−2) based on the same SEGI composition. Our findings provide useful insight for enhancing the charge injection and transport properties in top-gated electrolyte-gated transistors by selecting the appropriate top-gate metal electrode.
KW - Electrolyte-gated transistors
KW - Gate electrode
KW - Gate metallization
KW - Low-voltage
KW - Solid-state electrolyte
UR - http://www.scopus.com/inward/record.url?scp=85041463471&partnerID=8YFLogxK
U2 - 10.1016/j.orgel.2018.01.011
DO - 10.1016/j.orgel.2018.01.011
M3 - Article
AN - SCOPUS:85041463471
SN - 1566-1199
VL - 55
SP - 63
EP - 68
JO - Organic Electronics
JF - Organic Electronics
ER -