Effect of Zinc/Tin composition ratio on the operational stability of solution-processed Zinc-Tin-Oxide Thin-Film transistors

Yong Hoon Kim; Jeong In Han; Sung Kyu Park

doi:10.1109/LED.2011.2171913

Effect of Zinc/Tin composition ratio on the operational stability of solution-processed Zinc-Tin-Oxide Thin-Film transistors

Yong Hoon Kim, Jeong In Han, Sung Kyu Park

Department of Chemical and Biochemical Engineering

Research output: Contribution to journal › Article › peer-review

62 Scopus citations

Abstract

Variation of Zn:Sn atomic composition ratio in zinc-tin-oxide (ZTO) thin films induced a dramatic change in the microstructure and also strongly influenced the device performance and operational stability of ZTO thin-film transistors (TFTs). The large variation of threshold voltage shift under gate bias stress appears to be closely correlated to the excessive or deficient Sn content and the oxidation potentials of the metallic components as well as environmental effects. It is noted that the optimum Zn:Sn atomic composition ratio in ZTO films can improve the device performance and operational stability of the solution-processed ZTO TFTs.

Original language	English
Article number	6082369
Pages (from-to)	50-52
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	1
DOIs	https://doi.org/10.1109/LED.2011.2171913
State	Published - Jan 2012

Keywords

Composition ratio
operation stability
solution process
thin-film transistor (TFT)
zinc-tin-oxide (ZTO)

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10.1109/LED.2011.2171913

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@article{fc261b46d54e4efa8bb5faf4b89f6efd,

title = "Effect of Zinc/Tin composition ratio on the operational stability of solution-processed Zinc-Tin-Oxide Thin-Film transistors",

abstract = "Variation of Zn:Sn atomic composition ratio in zinc-tin-oxide (ZTO) thin films induced a dramatic change in the microstructure and also strongly influenced the device performance and operational stability of ZTO thin-film transistors (TFTs). The large variation of threshold voltage shift under gate bias stress appears to be closely correlated to the excessive or deficient Sn content and the oxidation potentials of the metallic components as well as environmental effects. It is noted that the optimum Zn:Sn atomic composition ratio in ZTO films can improve the device performance and operational stability of the solution-processed ZTO TFTs.",

keywords = "Composition ratio, operation stability, solution process, thin-film transistor (TFT), zinc-tin-oxide (ZTO)",

author = "Kim, {Yong Hoon} and Han, {Jeong In} and Park, {Sung Kyu}",

year = "2012",

month = jan,

doi = "10.1109/LED.2011.2171913",

language = "English",

volume = "33",

pages = "50--52",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "1",

}

TY - JOUR

T1 - Effect of Zinc/Tin composition ratio on the operational stability of solution-processed Zinc-Tin-Oxide Thin-Film transistors

AU - Kim, Yong Hoon

AU - Han, Jeong In

AU - Park, Sung Kyu

PY - 2012/1

Y1 - 2012/1

N2 - Variation of Zn:Sn atomic composition ratio in zinc-tin-oxide (ZTO) thin films induced a dramatic change in the microstructure and also strongly influenced the device performance and operational stability of ZTO thin-film transistors (TFTs). The large variation of threshold voltage shift under gate bias stress appears to be closely correlated to the excessive or deficient Sn content and the oxidation potentials of the metallic components as well as environmental effects. It is noted that the optimum Zn:Sn atomic composition ratio in ZTO films can improve the device performance and operational stability of the solution-processed ZTO TFTs.

AB - Variation of Zn:Sn atomic composition ratio in zinc-tin-oxide (ZTO) thin films induced a dramatic change in the microstructure and also strongly influenced the device performance and operational stability of ZTO thin-film transistors (TFTs). The large variation of threshold voltage shift under gate bias stress appears to be closely correlated to the excessive or deficient Sn content and the oxidation potentials of the metallic components as well as environmental effects. It is noted that the optimum Zn:Sn atomic composition ratio in ZTO films can improve the device performance and operational stability of the solution-processed ZTO TFTs.

KW - Composition ratio

KW - operation stability

KW - solution process

KW - thin-film transistor (TFT)

KW - zinc-tin-oxide (ZTO)

UR - http://www.scopus.com/inward/record.url?scp=84655164738&partnerID=8YFLogxK

U2 - 10.1109/LED.2011.2171913

DO - 10.1109/LED.2011.2171913

M3 - Article

AN - SCOPUS:84655164738

SN - 0741-3106

VL - 33

SP - 50

EP - 52

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 1

M1 - 6082369

ER -

Effect of Zinc/Tin composition ratio on the operational stability of solution-processed Zinc-Tin-Oxide Thin-Film transistors

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Keywords

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