Effective mass anisotropy of Γ electrons in GaAs/AlGaAs quantum wells

T. Reker; H. Im; L. E. Bremme; H. Choi; Y. Chung; P. C. Klipstein; Hadas Shtrikman

Effective mass anisotropy of Γ electrons in GaAs/AlGaAs quantum wells

T. Reker
, H. Im
, L. E. Bremme
, H. Choi
, Y. Chung
, P. C. Klipstein
, Hadas Shtrikman

Division of System Semiconductor

University of Oxford

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The anisotropy of effective mass of the confined γ conduction electrons in GaAs/Al_0.28Ga_0.72As quantum wells was analyzed during the perpendicular application of electric field to the interfaces. Resonant magnetotunneling was used to demonstrate the phenomena. A quantum mechanical model involving interface band mixing was used to explain the results.

Original language	English
Article number	056403
Pages (from-to)	564031-564034
Number of pages	4
Journal	Physical Review Letters
Volume	88
Issue number	5
State	Published - 4 Feb 2002

Cite this

@article{1109e39e7c0644c1988f4e2652b7531d,

title = "Effective mass anisotropy of Γ electrons in GaAs/AlGaAs quantum wells",

abstract = "The anisotropy of effective mass of the confined γ conduction electrons in GaAs/Al0.28Ga0.72As quantum wells was analyzed during the perpendicular application of electric field to the interfaces. Resonant magnetotunneling was used to demonstrate the phenomena. A quantum mechanical model involving interface band mixing was used to explain the results.",

author = "T. Reker and H. Im and Bremme, \{L. E.\} and H. Choi and Y. Chung and Klipstein, \{P. C.\} and Hadas Shtrikman",

year = "2002",

month = feb,

day = "4",

language = "English",

volume = "88",

pages = "564031--564034",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

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TY - JOUR

T1 - Effective mass anisotropy of Γ electrons in GaAs/AlGaAs quantum wells

AU - Reker, T.

AU - Im, H.

AU - Bremme, L. E.

AU - Choi, H.

AU - Chung, Y.

AU - Klipstein, P. C.

AU - Shtrikman, Hadas

PY - 2002/2/4

Y1 - 2002/2/4

N2 - The anisotropy of effective mass of the confined γ conduction electrons in GaAs/Al0.28Ga0.72As quantum wells was analyzed during the perpendicular application of electric field to the interfaces. Resonant magnetotunneling was used to demonstrate the phenomena. A quantum mechanical model involving interface band mixing was used to explain the results.

AB - The anisotropy of effective mass of the confined γ conduction electrons in GaAs/Al0.28Ga0.72As quantum wells was analyzed during the perpendicular application of electric field to the interfaces. Resonant magnetotunneling was used to demonstrate the phenomena. A quantum mechanical model involving interface band mixing was used to explain the results.

UR - https://www.scopus.com/pages/publications/0037017083

M3 - Article

AN - SCOPUS:0037017083

SN - 0031-9007

VL - 88

SP - 564031

EP - 564034

JO - Physical Review Letters

JF - Physical Review Letters

IS - 5

M1 - 056403

ER -

Effective mass anisotropy of Γ electrons in GaAs/AlGaAs quantum wells

Abstract

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