@inproceedings{276793a3dee64bcbb49fbf494802f7be,
title = "Effects of constant voltage stressing on HfTaOx/SiGe gate stack",
abstract = "Ultrathin HfTaOx gate dielectric has been deposited on Si 0.81Ge0.19by RF co-sputtering of HfO2 and Ta2O5 targets. X-ray photoelectron spectroscopic (XPS) analyses indicate an interfacial layer containing GeOx, Hf silicate, SiO x (layer of Hf- Si-Ge-O) formation during deposition of HfTaO x. No evidence of Ta-silicate or Ta incorporation was found at the interface. X-ray diffraction (GIXRD) measurements show that as-deposited HfTaOx films are amorphous; however, the crystallization temperature of HfTaOx film is found to increase significantly after annealing beyond 500°C (for 5 min) along with the incorporation of Ta (with 18% Ta). It has been found that HfTaOx gate dielectric on Si 0.81Ge0.19 exhibit excellent electrical properties with low interface state density (∼6.0×1011 cm-2eV-1) and hysteresis voltage (<70 mV). Charge trapping/detrapping behavior of the gate stacks has been studied under constant voltage stressing and the degradation mechanism of the dielectrics has been studied in detail.",
keywords = "Constant voltage Stress, MOS Capacitor, SiGe",
author = "S. Mallik and C. Mahata and Hota, {M. K.} and Sarkar, {C. K.} and Maiti, {C. K.}",
year = "2012",
doi = "10.1117/12.926999",
language = "English",
isbn = "9780819493002",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
booktitle = "16th International Workshop on Physics of Semiconductor Devices",
address = "United States",
note = "16th International Workshop on Physics of Semiconductor Devices, IWPSD 2011 ; Conference date: 19-12-2011 Through 22-12-2011",
}